Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

We report on the electrical detection of electron nuclear double resonance (EDENDOR) through spin-dependent tunneling transport in an amorphous hydrogenated silicon thin film. EDENDOR offers a many orders of magnitude improvement over classical ENDOR and is exclusively sensitive to paramagnetic defects involved in electronic transport. We observe hyperfine interactions with 1H nuclei very close to silicon dangling bond defects. These observations substantially extend recent EDENDOR observations involving silicon vacancy defects and 14N hyperfine interactions with fairly distant nitrogen atoms in 4H-SiC bipolar junction transistors. We have improved the detection scheme utilized in the earlier study by combining magnetic field modulation with RF amplitude modulation; this combination significantly improves the operation of the automatic power leveling scheme and the overall sensitivity.

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Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature

Nishikawa

Morioka

Abe

et al. 2022

Applied Physics Letters

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Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attractive systems for quantum information and quantum sensor devices with excellent spin properties at room temperature. In addition, nuclear spins in crystals are expected to serve as the quantum memory and to enhance the sensitivity of quantum sensors with the combination with color centers as a result of an extremely long spin coherence time. Although the spin state of both color centers and nuclear spins coupled through hyperfine interactions is usually optically read out, an electrical readout technique is important for miniaturizing and integrating devices. In the present study, we report the electrical detection of silicon vacancy (V2) centers in 4H-SiC by photocurrent-detected magnetic resonance (PDMR) using a frequency-sweep technique. We electrically observe the spin coherence of the V2 centers and clearly resolve the hyperfine splitting of the electron spin signal for the V2 centers coupled with next-nearest-neighbor 29Si atoms. In addition, we apply PDMR to electron–nuclear double resonance (PD-ENDOR) to detect nuclear magnetic resonance of 29Si at room temperature and find that this method can resolve nuclear spins coupled with neighboring electron spins in the V2 centers. The realization of PD-ENDOR is expected to be a critical step toward the development of electrically driven integrated quantum devices.

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Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Cited by 4 publications

References 23 publications

Electrically detected electron nuclear double resonance in amorphous hydrogenated boron thin films

Electrically detected electron nuclear double resonance in amorphous hydrogenated boron thin films

Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films

Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature

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