“…263 In a recent demonstration in Si the photonics-electronics integration enables electrical control of a coupled ultrahigh-quality-factor nanocavity system on a silicon chip, transferring the confined photons from one to another cavity. 264 A similar idea could be applied to SiC. In this respect the main advantage of SiC compared to Si would be the high breakdown voltage (which would enable for example larger frequency tuning ranges of resonators by applying larger electric fields), strong thermal conductivity, lower absorption, good thermal stability, and broadband transparency.…”
Section: ■ Conclusion and Outlookmentioning
confidence: 99%
“…This has in fact been one of the major element for the progress of Si PICs . In a recent demonstration in Si the photonics-electronics integration enables electrical control of a coupled ultrahigh-quality-factor nanocavity system on a silicon chip, transferring the confined photons from one to another cavity . A similar idea could be applied to SiC.…”
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in highpower and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.
“…263 In a recent demonstration in Si the photonics-electronics integration enables electrical control of a coupled ultrahigh-quality-factor nanocavity system on a silicon chip, transferring the confined photons from one to another cavity. 264 A similar idea could be applied to SiC. In this respect the main advantage of SiC compared to Si would be the high breakdown voltage (which would enable for example larger frequency tuning ranges of resonators by applying larger electric fields), strong thermal conductivity, lower absorption, good thermal stability, and broadband transparency.…”
Section: ■ Conclusion and Outlookmentioning
confidence: 99%
“…This has in fact been one of the major element for the progress of Si PICs . In a recent demonstration in Si the photonics-electronics integration enables electrical control of a coupled ultrahigh-quality-factor nanocavity system on a silicon chip, transferring the confined photons from one to another cavity . A similar idea could be applied to SiC.…”
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in highpower and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.
“…PhCs have attracted widespread attention over the past 30 years due to their wide application in optics and photonics ( Cai et al, 2021 ). In particular, they have been used in electro-optic modulators ( Li et al, 2020 ), spectrometers ( Chang et al, 2021 ), quantum emitters ( Rong et al, 2020 ), lasers ( Morita et al, 2021 ), resonators ( Yu et al, 2021 ), nanocavity ( Nakadai et al, 2022 ), sensors ( Zhang et al, 2021 ), and anti-counterfeiting labels ( Lai et al, 2022 , Wu et al, 2022 ).…”
“…Benefiting from advanced semiconductor manufacturing processes, silicon-based imagers with ultra-high performance (high resolution and wide dynamic response range) can be successfully prepared. Silicon-based imagers have a huge demand in deep learning [1,2], optoelectronic computing [3][4][5], and neural network computing [6]. The primary reason for the popularity of silicon-based imagers is their compatibility, allowing them to be manufactured on a large scale at a low cost.…”
Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze imaging, food selection, semiconductor detection, and atmospheric pollutant detection. Over the past several decades, the CMOS integrated circuits modified by traditional bulk semiconductor materials as sensitivity sensors for optoelectronic imagers have been used for infrared imaging. However, traditional bulk semiconductor material-based infrared imagers are synthesized by complicated molecular beam epitaxy, and they are generally coupled with expensive flip-chip-integrated circuits. Hence, high costs and complicated fabrication processes limit the development and popularization of infrared imagers. Emerging materials, such as inorganic–organic metal halide perovskites, organic polymers, and colloidal quantum dots, have become the current focus point for preparing CMOS-compatible optoelectronic imagers, as they can effectively decrease costs. However, these emerging materials also have some problems in coupling with readout integrated circuits and uniformity, which can influence the quality of imagers. The method regarding coupling processes may become a key point for future research directions. In the current review, recent research progress on emerging materials for infrared imagers is summarized.
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