Electrically Conducting Pb_yO_x–SiO₂ Glass Films Deposited by Reactive Radio‐Frequency Magnetron Sputtering

Abstract

Lead silicate glass films were deposited on sapphire substrates in different plasmas (100% Ar; 20% H, + 80% Ar; 5% 0, + 95% Ar) by reactive radio-frequency magnetron sputtering. The stoichiometry of the films, determined by Rutherford backscattering spectroscopy, changed with the deposition conditions. X-ray diffractometry analysis showed the presence of metallic Pb in the samples sputtered in H,-containing plasma. The room-temperature sheet resistance of the films ranged from >loi6 R/[7 (0,-containing atmosphere) to about lo3 R/O (H,-containing atmosphere).