Electrically active interface defects in the In0.53Ga0.47As MOS system

Djara, V.; O’Regan, Terrance; Cherkaoui, Karim; Schmidt, Michael; Monaghan, Scott; O’Connor, Eileen; Povey, Ian M.; O’Connell, Dan; Pemble, Martyn E.; Hurley, Paul K.

doi:10.1016/j.mee.2013.03.026

Cited by 24 publications

(45 citation statements)

References 43 publications

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“…21. This assumption is in agreement with the extracted b value of 1.0 (Table I) suggesting a discrete r. Therefore, considering from our previous work 27 that an energy range of $0.8 eV is swept when V g goes from V base ¼ À0.3 V to V peak ¼ 2 V and assuming Dt bt $ 2 Å (Ref. 21), a D bt ÁDt bt ÁDE of 7.8 Â 10 12 /cm 2 (Table I) equates to a D bt of $ 4.9 Â 10 20 / cm 3 .eV.…”

Section: Transient Charging Time and Border Trap Responsesupporting

confidence: 91%

“…4(a) and considering a theoretical C inv of 5.5 Â 10 À7 F/cm 2 , obtained for the Pd/Al 2 O 3 (10 nm)/ In 0.53 Ga 0.47 As gate stack in our previous work, 27 we can compare the measured N CP -V peak (V base ¼ À0.3 V) curve to a theoretical C inv . (V g -V T )/q curve.…”

Section: B Evidence Of Border Trap Responsementioning

confidence: 98%

“…18,21,34 It is noted that the discussion of the D bt ÁDt bt ÁDE data relies on the energy vs gate bias and trap density vs energy profiles obtained from a previous C-V study that we performed on the same set of devices as that used in this study. 27 Moreover, since Dt bt cannot be obtained from our ICP-based approach, a value of $ 2 Å is assumed from Ref. 21.…”

Section: Transient Charging Time and Border Trap Responsementioning

confidence: 99%

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Djara

Cherkaoui

Negara

et al. 2015

Journal of Applied Physics

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Original citationDjara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N inv ) from the trapped charge density in high-k/ InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I d -V g measurements enabled an accurate effective mobility vs N inv extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs. V C 2015 AIP Publishing LLC.

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Section: Transient Charging Time and Border Trap Responsesupporting

confidence: 91%

Section: B Evidence Of Border Trap Responsementioning

confidence: 98%

Section: Transient Charging Time and Border Trap Responsementioning

confidence: 99%

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Djara

Cherkaoui

Negara

et al. 2015

Journal of Applied Physics

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“…47 As near the semiconductor/oxide interface to be extracted. [6][7][8][9] Key findings include the following. The dominant interface defects are electrically active for the range of gate voltages typical for device operation; the defects are believed to be associated with the semiconductor and largely independent of the specific gate oxide material; the highest defect density within the bandgap occurs between the valence band maximum (VBM) and midgap, 6 with a donor-like character.…”

Section: Introductionmentioning

confidence: 99%

“…Acceptor-like defect states, which can also be detrimental to device operation, are also observed in the conduction band. 8 The electrical techniques applied to extract the defect states in the bandgap cannot directly identify the atomic structure of the defects, nor provide insight into avoiding the formation of the defects, nor guide strategies for defect passivation. Hence, the purpose of the calculations presented in this study is to narrow the possible set of atomistic configurations giving rise to defects levels in the bandgap, and thereby motivate the development of growth conditions and processing steps that either passivate the defects or avoid their formation.…”

Section: Introductionmentioning

confidence: 99%

First principles modeling of defects in the Al2O3/In0.53Ga0.47As system

Greene‐Diniz¹,

Kuhn

Hurley³

et al. 2017

Journal of Applied Physics

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Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In0.53Ga0.47As and for models of the In0.53Ga0.47As/Al2O3 interface. The results are consistent with previous computational studies that AsGa antisites are candidates for defects observed in capacitance voltage measurements on metal-oxide-semiconductor capacitors, as the AsGa antisite introduces energy states near the valence band maximum and near the middle of the energy band gap. However, substantial broadening in the distribution of the GaAs charge transition levels due to the variation in the local chemical environment resulting from alloying on the cation (In/Ga) sublattice is found, whereas this effect is absent for AsGa antisites. Also, charge transition energy levels are found to vary based on proximity to the semiconductor/oxide interface. The combined effects of alloy-and proximity-shift on the GaAs antisite charge transition energies are consistent with the distribution of interface defect levels between the valence band edge and midgap as extracted from electrical characterization data. Hence, kinetic growth conditions leading to a high density of either GaAs or AsGa antisites near the In0.53Ga0.47As/Al2O3 interface are both consistent with defect energy levels at or below midgap.Hence the purpose of the calculations presented in this study is to narrow the possible set of atomistic configurations giving rise to defects levels in the band gap, and thereby motivate the development of growth conditions and processing steps that either passivate the defects or avoid their formation.Recent density functional theory (DFT) investigations of defects in related III-V (GaAs, InAs, and InGaAs alloys) materials have been reported. These studies provide predictions for the stability and amphoteric nature of native defects in bulk and oxide-terminated surface models using hybrid exchange-correlation (XC) functionals [10-14], with the hybrid functionals chosen to overcome the DFT band gap problem. In such approaches a fraction a of Hartree-Fock exchange is mixed into the XC functional (giving rise to a hybrid functional), and the value of a is usually adjusted to reproduce the experimental band gap. These authors [10][11][12][13][14] conclude that the position of the midgap charge transition levels (CTLs) of the AsGa antisite, combined with a predicted lower formation energy relative to other commonly studied point defects, , suggest that this antisite is responsible for the midgap Dit states observed in the capacitance-voltage (CV) response of In0.53Ga0.47As/high-k oxide MOS capacitors. In other works, studies of bonding mechanisms at the III-V/oxide interfaces GaAs/Al2O3 and GaAs/HfO2 have been presented [15], and predictions of charge transition levels (CTLs) of As and P vacancies at (110) oriented GaAs and InP surfaces are reported in ref. [16]. The latter utilizes many body perturbation theory (MBPT) to avoid the need to...

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Modulation‐Doped Field‐Effect Transistors (MODFET)

Zhu

Ferreyra

Morkoç̌

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, e.g., a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits, and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms is a very attractive option for the next‐generation high‐speed integrated circuits but faces serious challenges because of the lack of a high‐quality and natural insulator. III‐V Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN based high power HFETs on SiC substrate with 60 nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1∼1.2 Ω·mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in Class AB mode on GaN semi‐insulating substrates, a continuous wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power added efficiency of 40% at 10 GHz. III‐Nitride devices for power switching application has achieved near theoretical limit for vertical devices based GaN native substrates, and breakdown voltage as high as 1200 V and on resistance as low as 9 mΩ‐cm2 for lateral HFET devices on low‐cost silicon substrates. For AlGaN/GaN HFETs on high‐resistivity silicon substrates, promising results were also demonstrated. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In In0.17Al0.83N barrier HFETs. Despite the above‐mentioned encouraging achievements, the degradation mechanisms are still not clear, which requires further investigation. The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in a Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary p ‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz.

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Electrically active interface defects in the In0.53Ga0.47As MOS system

Cited by 24 publications

References 43 publications

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

First principles modeling of defects in the Al2O3/In0.53Ga0.47As system

Modulation‐Doped Field‐Effect Transistors (MODFET)

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