Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

Abstract

The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Квантовый Выход Двусторонних Солнечных Элементов Типа HIT

“…Высокий уровень энергии позволяет подавить рекомбинацию интерфейса a-Si : H/c-Si и приводит к высокому значению напряжения холостого хода. Сам уровень связан с легирующей примесью для p-области [31]. Рост амплитуды пика РСГУ при увеличении времени релаксации указывает на перезарядку энергетических состояний на границе раздела аморфного и кристаллического кремния.…”

External Quantum Efficiency of Bifacial HIT Solar Cells

“…A high energy level suppresses recombination of the a-Si:H/c-Si interface and leads to a high value of the open-circuit voltage. The level itself is associated with a dopant for the p-type region [31]. An increase in the amplitude of the I-DLTS peak with the relaxation time indicates charge exchange of the energy states at the interface between amorphous and crystalline silicon.…”

Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

“…The deep level transient spectroscopy method (DLTS) founded in 1974 by David Vern Lang [1] is one of the most frequently used diagnostic methods of emission and capture processes investigations in semiconductors. Since the basic methodology was defined, many improvements and measurement systems were developed with a continuous effort to refine the analysis and to achieve highly reliable experiments [2,3]. Deep energy levels, often described as traps, defect states or impurities are most of the time direct sources of material degradation, undesired electrical, optical or even structural properties.…”