The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe 2 and rare-earth monopnictide La(Sb,Bi), these systems tend to be nonmagnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of 1.6 × 10 6 % at fields of 9 T whereas the magnetoresistance itself is nonmonotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with fields above magnetic ordering temperature T N . The magnitude of the XMR is larger than in other rare-earth monopnictides including the nonmagnetic members and follows a nonsaturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare-earth-based correlated topological materials.DOI: 10.1103/PhysRevB.97.081108 Magnetoresistance (MR), i.e., the change in electrical resistance induced by application of a magnetic field, is a well-studied phenomenon in condensed-matter physics with relevance for magnetic sensing technologies and other novel electronic devices. Despite its long history, it continues to drive a rich field of study with new microscopic mechanisms and their material realizations being reported. Examples range from the classical orbital MR in metals induced by the Lorentz force [1] to linear MR in Dirac materials accompanied by quantum Landau-level formation [2]. Magnetic materials in particular host diverse MR behavior including giant magnetoresistance in magnetic multilayers [3] and colossal magnetoresistance (CMR) in oxides [4,5]. The magnitude and controllability of such effects have enabled their significant technological impact.Towards the realization of MR capable of modifying electrical resistance on the order of the magnitude level, two strategies have seen particular success. First, materials designed on the verge of a magnetically active metal-insulator transition offer the possibility of magnetic-field control between phases capable of driving a large MR response (changes of ∼10 5 % have been reported) [5]. Alternatively, in nonmagnetic compounds it is known that the combination of carrier compensation and high mobility can lead to nonsatura...