Electrical transport properties of hexagonal boron nitride epilayers

Grenadier, S. J.; Maity, Avisek; Li, Jing; Lin, J. Y.; Jiang, Hongxing

doi:10.1016/bs.semsem.2021.04.008

Cited by 7 publications

(16 citation statements)

References 110 publications

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“…h-BN is mostly used as a support or encapsulation layer for graphene or other 2D materials and therefore its intrinsic mobility is seldom investigated. In the literature, we found high temperature hole mobility reports of 18 cm 2 /Vs using the Van der Pauw-Hall method 125 as well as 2 cm 2 /Vs with h-BN doped through Mg implantation 126 . Interestingly the hole mobility was also obtained by time of flight measurement and gave 35.5 cm 2 /Vs for holes and 34.2 cm 2 /Vs for electrons 127 .…”

Section: Carrier Mobilitymentioning

confidence: 96%

Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional materials

Poncé¹,

Royo²,

Stengel³

et al. 2022

Preprint

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Charge transport plays a crucial role in manifold potential applications of two-dimensional materials, including field effect transistors, solar cells, and transparent conductors. At most operating temperatures, charge transport is hindered by scattering of carriers by lattice vibrations. Assessing the intrinsic phonon-limited carrier mobility is thus of paramount importance to identify promising candidates for next-generation devices. Here we provide a framework to efficiently compute the drift and Hall carrier mobility of two-dimensional materials through the Boltzmann transport equation by relying on a Fourier-Wannier interpolation. Building on a recent formulation of long-range contributions to dynamical matrices and phonon dispersions [Phys. Rev. X 11, 041027 (2021)], we extend the approach to electron-phonon coupling including the effect of dynamical dipoles and quadrupoles. We study a wide selection of relevant monolayers ranging from SnS2 to MoS2, graphene, BN, InSe, and phosphorene, showing the importance of the current strategy to fully account for the peculiar nature of long-range electrostatics in two dimensions. Interestingly, we discover a non-trivial temperature evolution of the Hall hole mobility in InSe whereby the mobility increases with temperature above 150 K due to the mexican-hat electronic structure of the InSe valence bands. Overall, we find that dynamical quadrupoles are essential and can impact the carrier mobility in excess of 40%.

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Section: Carrier Mobilitymentioning

confidence: 96%

Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional materials

Poncé¹,

Royo²,

Stengel³

et al. 2022

Preprint

View full text Add to dashboard Cite

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“…1,2) Among III-nitrides, hexagonal BN (h-BN) with an ultrawide bandgap (∼6.1 eV) is considered a remaining frontier with many unique properties. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] These include a large optical absorption coefficient (7.5 × 10 5 cm −1 ) resulting in an extremely small optical absorption length of about 15 nm for the above bandgap photons, 3,4) huge excitonic effects, 7,8) a more feasible p-type conductivity control than AlN [9][10][11][12] and point defects exhibiting single photon emitters which are optically stable [13][14][15][16] and capable to operate at elevated temperatures. 17) Another unique aspect of h-BN is that it is also an ideal material for the realization of solid-state directconversion thermal neutron detectors with high efficiency and sensitivity.…”

mentioning

confidence: 99%

“…17) Another unique aspect of h-BN is that it is also an ideal material for the realization of solid-state directconversion thermal neutron detectors with high efficiency and sensitivity. 11,12,[18][19][20] This is because 10 B isotope is among a few elements having a significant capture cross section (σ) for thermal neutrons (σ = 3840 barns or 3.84 × 10 -21 cm 2 for 10 B). 21) Compared to He-3 gas detectors, semiconductor detectors offer obvious advantages of reduced size and weight, lower operating voltage and power consumption, elimination of pressurization, and lower costs of operation/maintenance.…”

mentioning

confidence: 99%

“…Previous studies revealed strong evidence that oxygen and its related defects are detrimental to the charge collection efficiency of h-10 BN neutron detectors. 11,12,[18][19][20]30) Moreover, during MOCVD growth of h-BN using relatively high growth rates, various polytype domains may be incorporated and the stacking sequence may also be random to form turbostratic BN (t-BN) domains inside h-BN because the stacking sequence has only a minor effect on the total energy of the layer-structured BN crystals. 31) The presence of t-BN domains in h-BN layers has been confirmed previously by X-ray diffraction (XRD) and ellipsometry measurements.…”

mentioning

confidence: 99%

“…B-10 enriched h-BN wafers were grown on c-plane sapphire of 4 inches in diameter using MOCVD. As described in our previous works, 11,12,[18][19][20] B-10 enriched trimethylboron (TMB) and ammonia (NH 3 ) were used as the precursors for B-10 and N, respectively. To reduce the oxygen diffusion from the sapphire substrate into h-10 BN layers, multiple thin BN buffer layers with a total thickness of about 100 nm were first grown at ∼800 °C to 1000 °C, which was then followed by the growth of the h- 10 BN active layer at a temperature of ∼1400 °C.…”

mentioning

confidence: 99%

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Probing the bandgap and effects of t-BN domains in h-BN neutron detectors

Li²,

Lin³

et al. 2022

Appl. Phys. Express

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Thermal neutron detectors in a lateral scheme were fabricated from a 70 µm thick freestanding B-10 enriched hexagonal BN (h-10BN). Two sets of channel peaks corresponding to the neutron capture by 10B occurring in h-10BN comprising turbostratic domains (t-10BN) have been recognized in the nuclear reaction pulsed height spectrum, from which a bandgap of 5.5 eV was directly deduced for t-10BN. Improved device performance over the prior state-of-the-art implies that the transport properties in the lateral plane of t-BN domains are sufficiently good and their presence in h-BN is not a showstopper for the further advancement of h-BN detector technologies.

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Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling

et al. 2023

Physica Rapid Research Ltrs

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Herein, a device study using technology computer‐aided design simulation to theoretically analyze the electrical performance of ultrawide‐bandgap boron nitride (BN)‐based vertical junction devices is performed, including h‐BN Schottky diode, h‐BN pn diode, and h‐BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. The h‐BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn‐on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 1015 cm−3 p‐type‐doped drift layer; The h‐BN pn diode shows a turn‐on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm−1 for 2.5 μm, 2 × 1016 cm−3 p‐type‐doped drift layer. The h‐BN/AlN heterojunction pn diode shows a turn‐on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 1016 cm−3 n‐type‐doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

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Electrical transport properties of hexagonal boron nitride epilayers

Cited by 7 publications

References 110 publications

Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional materials

Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional materials

Probing the bandgap and effects of t-BN domains in h-BN neutron detectors

Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling

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