Zinc Oxide Materials for Electronic and Optoelectronic Device Applications 2011
DOI: 10.1002/9781119991038.ch3
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Electrical Transport Properties in Zinc Oxide

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Cited by 11 publications
(7 citation statements)
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“…The fundamental semiconductor properties of ZnO were extensive study during the late 1950s and the 1960s, including the study of its energy band structure, band gaps, the electrical transport properties of the intrinsic (undoped) material, and others. However, the impossibility of p-type doping and the lack of large, bulk single crystals of ZnO hampered the progress in the development of ZnO-based electronic devices [137].…”
Section: Znomentioning
confidence: 99%
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“…The fundamental semiconductor properties of ZnO were extensive study during the late 1950s and the 1960s, including the study of its energy band structure, band gaps, the electrical transport properties of the intrinsic (undoped) material, and others. However, the impossibility of p-type doping and the lack of large, bulk single crystals of ZnO hampered the progress in the development of ZnO-based electronic devices [137].…”
Section: Znomentioning
confidence: 99%
“…Nowadays, ZnO is being used as an electronic material in photonics, optoelectronics, varistors, transparent power electronics, surface acoustic wave devices, piezoelectric transducers, ultra-violet (UV) light emitters, sensors, and solar cells [138]. Nevertheless, ZnO properties such as wide band gap (3.3 eV), high melting point (1975 • C), low thermal expansion, and high electron mobility (2000 cm 2 /(Vs)) [137] give ZnO the advantages of high breakdown voltage, ability to sustain large electrical fields, lower electronics noise, high temperature and high-power operation.…”
Section: Znomentioning
confidence: 99%
“…Research interest in the II-VI compound semiconductor ZnO continues to grow for next generation opto-and microelectronics based on its wide band gap (3.37 eV), large exciton binding energy (60 meV), low cost, ease of growth and etching, and biocompatibility. [1][2][3][4] Among extensive studies of this material, there is increasing interest in ZnO nanostructures, which have already demonstrated their utility as field effect transistors, optically pumped lasers, photodetectors, batteries, chemical and biological sensors. [5][6][7][8][9] Achievable through different growth conditions, these nanostructures display a wide variety of morphologies, including: nano-and microwires, tetrapods, needles, and helix structures.…”
Section: Introductionmentioning
confidence: 99%
“…Due to its electrochemical and its dielectric properties make it a perfect candidate for supercapacitor elecrodes. 20 The combination of CA-ZnO composite has been reported to have a relatively high dielectric and make it an excellent material as supercapacitor system. 12 A distortion or other general change of structures and lattice strain could change its dielectric constant.…”
Section: Introductionmentioning
confidence: 99%