Electrical Transport Properties in Zinc Oxide

Claflin, B.

doi:10.1002/9781119991038.ch3

Cited by 11 publications

(7 citation statements)

References 255 publications

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“…The fundamental semiconductor properties of ZnO were extensive study during the late 1950s and the 1960s, including the study of its energy band structure, band gaps, the electrical transport properties of the intrinsic (undoped) material, and others. However, the impossibility of p-type doping and the lack of large, bulk single crystals of ZnO hampered the progress in the development of ZnO-based electronic devices [137].…”

Section: Znomentioning

confidence: 99%

“…Nowadays, ZnO is being used as an electronic material in photonics, optoelectronics, varistors, transparent power electronics, surface acoustic wave devices, piezoelectric transducers, ultra-violet (UV) light emitters, sensors, and solar cells [138]. Nevertheless, ZnO properties such as wide band gap (3.3 eV), high melting point (1975 • C), low thermal expansion, and high electron mobility (2000 cm 2 /(Vs)) [137] give ZnO the advantages of high breakdown voltage, ability to sustain large electrical fields, lower electronics noise, high temperature and high-power operation.…”

Section: Znomentioning

confidence: 99%

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Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

et al. 2021

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At present, the energy transition is leading to the replacement of large thermal power plants by distributed renewable generation and the introduction of different assets. Consequently, a massive deployment of power electronics is expected. A particular case will be the devices destined for urban environments and smart grids. Indeed, such applications have some features that make wide bandgap (WBG) materials particularly relevant. This paper analyzes the most important features expected by future smart applications from which the characteristics that their power semiconductors must perform can be deduced. Following, not only the characteristics and theoretical limits of wide bandgap materials already available on the market (SiC and GaN) have been analyzed, but also those currently being researched as promising future alternatives (Ga2O3, AlN, etc.). Finally, wide bandgap materials are compared under the needs determined by the smart applications, determining the best suited to them. We conclude that, although SiC and GaN are currently the only WBG materials available on the semiconductor portfolio, they may be displaced by others such as Ga2O3 in the near future.

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Section: Znomentioning

confidence: 99%

Section: Znomentioning

confidence: 99%

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

et al. 2021

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“…Research interest in the II-VI compound semiconductor ZnO continues to grow for next generation opto-and microelectronics based on its wide band gap (3.37 eV), large exciton binding energy (60 meV), low cost, ease of growth and etching, and biocompatibility. [1][2][3][4] Among extensive studies of this material, there is increasing interest in ZnO nanostructures, which have already demonstrated their utility as field effect transistors, optically pumped lasers, photodetectors, batteries, chemical and biological sensors. [5][6][7][8][9] Achievable through different growth conditions, these nanostructures display a wide variety of morphologies, including: nano-and microwires, tetrapods, needles, and helix structures.…”

Section: Introductionmentioning

confidence: 99%

Defect segregation and optical emission in ZnO nano- and microwires

et al. 2016

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The spatial distribution of defect related deep band emission has been studied in zinc oxide (ZnO) nano- and microwires using depth resolved cathodoluminescence spectroscopy (DRCLS) in a hyperspectral imaging (HSI) mode within a UHV scanning electron microscope (SEM). Three sets of wires were examined that had been grown by pulsed laser deposition or vapor transport methods and ranged in diameter from 200 nm-2.7 μm. This data was analyzed by developing a 3D DRCLS simulation and using it to estimate the segregation depth and decay profile of the near surface defects. We observed different dominant defects from each growth process as well as diameter-dependent defect segregation behavior.

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“…Due to its electrochemical and its dielectric properties make it a perfect candidate for supercapacitor elecrodes. 20 The combination of CA-ZnO composite has been reported to have a relatively high dielectric and make it an excellent material as supercapacitor system. 12 A distortion or other general change of structures and lattice strain could change its dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

THE EFFECT OF NANO ZnO MORPHOLOGY ON STRUCTURE, DIELECTRIC CONSTANT, AND DISSIPATION FACTOR OF CA-NANO ZnO/ITO FILMS

Mustikasari

Diantoro

Mufti

et al. 2018

Jurnal Fisika dan Aplikasinya

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<p>Research to utilize natural polymers continues to be driven primarily by utilization as an environmental friendly energy-generating and storage material. The high porosity makes cellulose acetate (CA) a good candidate as a dielectric material as the basis of the supercapacitor device. Various dopants and compositions have been widely used, but the nano size morphological differences of the same material are rarely reported. Two types of ZnO are prepared, i.e., nanoparticles and nanorods deposited with CA and deposited on ITO glass substrate. The CA-ZnO / ITO composite film was fabricated through spin coating technique. This study focused on ZnO morphological difference on the microstructure and the dielectricity of CA-ZnO /ITO composite films. The morphology of nanoparticles and nanorods of ZnO were analyzed more detail with respect to its microstructure and dielectric properties. It is revealed that the change of ZnO morphology from nanoparticles to nanorod increase the capacitance and dielectric constant significantly from the order of the nano to the micro and decrease the dielectric loss. The dielectric constant of CA-ZnONP/ITO and CA-ZnONR/ITO are respectively of 2569 and 97159 at 100 Hz. The capacitance and dielectric loss of CA-ZnONP/ITO and CA-ZnONR/ITO reach to 69.809 nF; 678 and 2,15765 µF; 13,23 respectively. </p>

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Electrical Transport Properties in Zinc Oxide

Cited by 11 publications

References 255 publications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Defect segregation and optical emission in ZnO nano- and microwires

THE EFFECT OF NANO ZnO MORPHOLOGY ON STRUCTURE, DIELECTRIC CONSTANT, AND DISSIPATION FACTOR OF CA-NANO ZnO/ITO FILMS

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