Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1−xMnxAs films

Angelico, João C.; Pereira, Aledir Silveira; Arruda, Larisa Baldo de; Silva, José Humberto Dias da

doi:10.1016/j.jallcom.2015.01.032

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“…As a diluted magnetic semiconductor (DMS), [1][2][3] the doping of Mn in GaAs, when it was prepared by molecular beam epitaxy in 1996, 4 has generated much research. [5][6][7][8] Films made from (Ga,Mn)As remain worthy of research and in the last two years this had covered topics such as: the spin-orbit torque effective elds, 9 the vertical magnetisation gradients, 10 electronic excitations of a magnetic impurity state, 11 electrical transport mechanisms, 12 and magnetic anisotropy elds. [13][14][15][16][17] To overcome the low solubility of Mn in earlier years, 18 a GaAs/MnAs superlattice (called d-(Ga,Mn)As) has been constructed by molecularbeam epitaxy (MBE).…”

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confidence: 99%