Electrical transport in doped multiwalled carbon nanotubes

Liu, K.; Avouris, Phaedon; Martel, Richard; Hsu, Wen Kuang

doi:10.1103/physrevb.63.161404

Cited by 162 publications

(109 citation statements)

References 25 publications

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“…In order to compare quantitatively experiments and theory we have to take into account the initial density of defects (most likely substitutional 27 23 . The experimental and theoretical results are summarised in the table shown in Fig.…”

Section: Tuning the Conductance Of Single Walled Carbon Nanotubes By mentioning

confidence: 99%

Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

et al. 2005

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Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription Tuning the conductance of single walled carbon nanotubes by ion irradiation in the Anderson localization regimeC. Gómez-Navarro 1 , P.J. Carbon nanotubes 1,2 are a good realization of one-dimensional crystals where basic science and potential nanodevice applications merge 3 . Defects are known to modify the electrical resistance of carbon nanotubes 4 . They can be present in asgrown carbon nanotubes, but controlling externally their density opens a path towards the tuning of the nanotube electronic characteristics. In this work consecutive Ar + irradiation doses are applied to single-walled nanotubes (SWNTs) producing a uniform density of defects. After each dose, the room temperature resistance versus SWNT-length [R(L)] along the nanotube is measured. Our data show an exponential dependence of R(L) indicating that the system is within the strong Anderson localization regime. Theoretical simulations demonstrate that mainly di-vacancies contribute to the resistance increase induced by irradiation and that just a 0.03% of di-vacancies produces an increase of three orders of magnitude in the resistance of a 400 nm SWNT length.The traditional approximation to reduce the size and enhance the performance of electronic devices may not be applicable in the near future 5 . Electronic circuits based on molecules have created great expectation for their new foresighted properties. For the case of electronic circuits based on carbon nanotubes 6 , the influence of disorder and defects 4,7 is of fundamental relevance in the performance of the device. In particular, the density of defects would determine the transport in nanotubes from a ballistic regime 8,9 to either weak or strong localization regimes. Quantum theory dictates that for a one dimensional conductor of length L 10,11 , with a given density of defects, localization effects emerge when the "phase coherence length" L φ is larger than the localization length L 0 . If L is not too large (for L about 3-10 L 0 ) and the inelastic interaction is weak, the wire resistance is controlled by the phase-coherent electron propagation 12 , falling into the strong localization regime in which the resistance increases exponentially with the length of the wire. This regime has not been observed in single-walled nanotubes in spite of the many evidences for weak localization diffusive regime and quantum interference in multiwalled carbon nanotubes 13 . By changing the density of defects, L 0 can be modified allowing to control the resistance of the one dimensional conductor.Induced defects have been already used to modify different properties of carbon nanotubes. Indeed, electron-beam has been used to create in-situ nanotube junctions 14 and to enhance the mechanical response of nanotubes bundles by creating stable links among the tubes 15...

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Section: Tuning the Conductance Of Single Walled Carbon Nanotubes By mentioning

confidence: 99%

Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

et al. 2005

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“…Indeed, transport measurements [7,8,9] have shown a clearly enhanced conductivity of B-doped tubes. The metallic behavior of B-doped multiwall carbon nanotubes was also confirmed by scanning tunneling spectroscopy [10].…”

Section: Introductionmentioning

confidence: 99%

Band structure of boron doped carbon nanotubes

Wirtz

Rubio²

2003

AIP Conference Proceedings

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Abstract. We present ab initio and self-consistent tight-binding calculations on the band structure of single wall semiconducting carbon nanotubes with high degrees (up to 25 %) of boron substitution. Besides a lowering of the Fermi energy into the valence band, a regular, periodic distribution of the p-dopants leads to the formation of a dispersive "acceptor"-like band in the band gap of the undoped tube. This comes from the superposition of acceptor levels at the boron atoms with the delocalized carbon π-orbitals. Irregular (random) boron-doping leads to a high concentration of hybrids of acceptor and unoccupied carbon states above the Fermi edge.

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“…DWCNTs: DWCNTs are considered as the simplest member of the family of MWCNTs, consisting of two coaxial SWCNTs [Saito et al, 2001;Endo et al, 2005]. DWCNTs have unique physical and mechanical properties due to their special double wall structure compared to those of SWCNTs and MWCNTs [Dai, 2002;Liu et al, 2001]. Figs.…”

Section: Swcnt Graphene Sheetmentioning

confidence: 99%

“…Yokozeki et al [Yokozeki et al, 2007] investigated the matrix cracking behaviors in carbon fibre-epoxy laminates filled with CSCNTs. The CSCNTs used in this study were synthesised by a floating reactant method [Liu et al, 2001] with aspect ratio 10. A two-step mixing procedure was employed; EP827 epoxy and CSCNTs (0, 5 and 12 wt%) were combined using the planetary mixer at 70°C, and then, CSCNTs were dispersed using the wet mill at 70°C for 45 min.…”

Section: Cscnt-containing Epoxy Compositesmentioning

confidence: 99%