Articles you may be interested inElectrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films Magnetic, magnetotransport, and optical properties of Al-doped Zn 0.95 Co 0.05 O thin films Appl. Phys. Lett. 90, 242508 (2007); 10.1063/1.2748343Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperatureWe have investigated the basic characteristics of mobile carriers in as-deposited thin films of hexagonal-close-packed Y and hydrogenated films of face-centered-cubic YH 2+␦ . Hall resistance and transverse magnetoresistance measurements were carried out under magnetic fields of up to 1 T at room temperature. The Hall coefficient in YH 2+␦ showed a minimum value of ϳ5 ϫ 10 −12 m 3 / C when the ␦ value reached ϳ−0.1, in accordance with the ␦ dependence of resistivity reported previously. Quantitative analysis based on the present measurements revealed that YH 2+␦ is a compensated metal whose carrier density and mobility were determined to be ϳ1.4ϫ 10 27 ͑ϳ1.9ϫ 10 27 ͒ m −3 and ϳ3.5ϫ 10 −3 ͑ϳ3.1ϫ 10 −3 ͒ m 2 V −1 s −1 , respectively, for ␦ = 0.04 ͑−0.03͒ for both electrons and holes. These carrier parameters were found to account concurrently for the reflection spectral line shapes observed. The compensation observed in YH 2+␦ is at variance with a simple criterion used previously ͓E. Fawcett and W. A. Reed, Phys. Rev. 131, 2463 ͑1963͔͒.