Electrical Transport and High‐Performance Photoconductivity in Individual ZrS₂ Nanobelts

Abstract

Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.

High‐Performance NiCo2O4 Nanofilm Photodetectors Fabricated by an Interfacial Self‐Assembly Strategy

“…[ 22 ] It is worth noting that the photocurrent of individual nanostructure-based devices in the previous study generally ranged from several pA to nA. [4][5][6][7][8][9] In the present study, a much higher photocurrent of 3.0 μ A was detected at a low applied voltage of 1.0 V when the device was illuminated with a white light, that is, the photocurrent of the fi lm-based device was signifi cantly enhanced ( ≈ 10 3 to 10 6 times) compared with the individual nanostructure-based photodetectors. The high photocurrent of the current fi lm device might be due to the fact that the photocurrent of the device was collected from a large number of NiCo 2 O 4 platelets rather than a single platelet.…”

“…[ 3 ] In particular, the interest in developing high-performance photodetectors has culminated in the realization of individual lowdimensional nanostructured photodetectors fabricated using a top-down approach. [4][5][6][7][8][9] Although the individual-nanostructurebased photodetectors exhibit high quantum effi ciency, the top-down approach usually requires a complex and costly lithography process including organic fi lm coating, exposure, metal evaporation, and lift-off. Technologically, if the nanostructures could be assembled in a thin-fi lm form, the metal electrodes could be easily deposited on the fi lm using a hand-operable metal microwire as a mask, and, additionally, the performances of such a thin-fi lm photodetector would be optimized due to the integration of a large number of individual nanostructures.…”

ZnS Nanostructure Arrays: A Developing Material Star

“…[ 119 ] The interest in developing high-performance photodetectors has culminated in the realization of individual nanowire/nanobelt photodetectors with ultrafast recovery speed and ultrahigh quantum-effi ciency. [120][121][122][123] Visible-blind UV-light sensors measure the power or intensity of incident UV radiation while it is blind or insensitive to visible light. Such sensors are very likely to be used in our daily life since prolonged exposure to UV radiation is one of the main reasons to cause skin cancer.…”

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

“…The monolayer of BP, known as phosphorene, exhibits physical properties that can be significantly different from those of its bulk counterpart 16. Phosphorene has changed the landscape of many research areas in science and technology, particularly in condensed matter physics, and it has received much attention recently for its use as the base component of novel nanodevices, e.g., transistors, nanomechanical resonators, photovoltaics, photodetectors, batteries and sensors 9, 10, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37…”