Electrical transients in high resistivity gallium arsenide

Northrop, D. C.; Thornton, P. R.; Trezise, K.E.

doi:10.1016/0038-1101(64)90118-2

Cited by 98 publications

(14 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, in the 1960s another very different type of domain was found in SI-GaAs [5,6], with drift velocities about six orders of magnitude lower and an estimated critical field for the onset of domains being reported to be approximately three times lower than the one for the Gunn effect ( Ec.Gunn = 3.1 X 105 V m_1). Successive experimental work during the following 15 years led to the development of a theory based on field-enhanced trapping of electrons in a deep level [7,8].…”

Section: Introductionmentioning

confidence: 98%

Non-linear transport and structure formation in semi-insulating GaAs

Willing

Maan

1996

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Abstract. We present an experimental study of slow domains in semi-insulating GaAs using time-resolved, two-dimensional electro-optic voltage probing. A detailed analysis of the shape of the bulk domains proves that they are formed by symmetric charge dipoles made up from ionized traps. The study of the dependence of the domain parameters on the applied voltage allows us for the first time to reconstruct experimentally the bulk y (^-characteristic of SI-GaAs and to show that prevailing theoretical models fail to explain the observations. The experimentally determined field dependence of the free-carrier concentration reveals a strongly field-enhanced trapping with no critical field. The drift velocity of domains is experimentally found to be exclusively determined by the free-carrier concentration at the centre of the domain.

show abstract

Section: Introductionmentioning

confidence: 98%

Non-linear transport and structure formation in semi-insulating GaAs

Willing

Maan

1996

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…A number of theories have been developed to explain these oscillations, most notably theories based on field-enhanced trapping and charge depletion regions at the electrodes that are larger than the carrier diffusion lengths. [6][7][8] In the case of the Schottky diodes tested in this article, field-enhanced trapping seems to be the appropriate explanation. In field-enhanced recombination, the trapping process is more efficient for hot carriers than those at thermal equilibrium.…”

Section: B Low-frequency Oscillationsmentioning

confidence: 80%

Low-frequency noise in epitaxially grown Schottky junctions

Young

Zimmerman

Brown

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1 / f noise compared to traditional Al Schottky diodes on the same semiconductor material. These junctions are grown by molecular beam epitaxy, preventing oxidation and other contamination at the junction. The major noise source for these devices is attributed to the sidewalls and not the junction itself. Low-frequency oscillations have also been observed and associated with a deep trap level estimated to be ϳ200 meV below the conduction band edge by the comparison of diodes with different InAlGaAs compositions and confirmed by deep level transient spectroscopy. This deep level could be associated to erbium incorporation in the depletion region.

show abstract

“…Low-frequency current oscillations (LFO) in semiinsulating (SI) GaAs were observed in many works since the 60's [1][2][3][4]. Theoretical models have been proposed to explain the LFOs and the chaotic behavior in GaAs, (Si) and in other semiconductors [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Modeling chaotic current oscillations in semi-insulating GaAs with rate-equations of impact ionization and field-enhanced trapping

Albuquerque¹,

Silva²,

Rubinger³

et al. 2006

Braz. J. Phys.

View full text Add to dashboard Cite

We investigated the effect of adding the fi eld-dependent recombination process, namely fi eld-enhanced trapping, to the generation-recombination processes of charge carriers that model current oscillations in semiconductors. The main new features arising from this modifi cation are identifi ed in bifurcation diagrams with the electric fi eld as the control parameter. The characteristic of the bifurcation diagrams is a function of impurity energy. Thus, we generated a set of bifurcation diagrams for a range of the impurity energy and applied bias. The energy dependence of the bifurcation diagrams is discussed considering the context of the competition between the generation-recombination mechanisms impact ionization and fi eld-enhanced trapping.

show abstract

Electrical transients in high resistivity gallium arsenide

Cited by 98 publications

References 9 publications

Non-linear transport and structure formation in semi-insulating GaAs

Non-linear transport and structure formation in semi-insulating GaAs

Low-frequency noise in epitaxially grown Schottky junctions

Modeling chaotic current oscillations in semi-insulating GaAs with rate-equations of impact ionization and field-enhanced trapping

Contact Info

Product

Resources

About