Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

Hekmatshoar, B.

doi:10.1109/access.2019.2921233

Cited by 6 publications

(6 citation statements)

References 61 publications

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“…Moreover, the value is not inferior to many previously found in polysilicon silicon, amorphous silicon, organic, and metal oxide transistors. [46,48] For a more intuitive comparison, Figure 4i enumerates the values reported in different materials in recent years. It is easy to observe that the α H of our InZn 50% O TFT is still highly competitive, and it also implies the potential in circuit applications.…”

Section: Resultsmentioning

confidence: 99%

“…The Hooge's parameter (α H ) is frequently used as a figure of merit for the comparison of different device technologies, and its value is generally inversely proportional to the good and bad quality of the material. [ 45,46 ] We can calculate α H from the following formula:

\begin{array}{*{20}{c}}{\frac{{{S_{{\rm{ID}}}}}}{{I_{{\rm{DS}}}^2}} = \frac{{{\alpha _H}q}}{{f{C_{{\rm{ox}}}}WL\;\left( {{V_{{\rm{GS}}}} - {V_{{\rm{TH}}}}} \right)}}}\end{array}

Where f is the frequency, C ox is the gate oxide capacitance per unit area, q is the elementary charge, W and L are the channel length and width, respectively. [ 45,47 ]…”

Section: Resultsmentioning

confidence: 99%

“…The Hooge's parameter (α H ) is frequently used as a figure of merit for the comparison of different device technologies, and its value is generally inversely proportional to the good and bad quality of the material. [45,46] We can calculate α H from the following formula:…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

et al. 2023

Adv Elect Materials

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Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (µFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

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Section: Resultsmentioning

confidence: 99%

\begin{array}{*{20}{c}}{\frac{{{S_{{\rm{ID}}}}}}{{I_{{\rm{DS}}}^2}} = \frac{{{\alpha _H}q}}{{f{C_{{\rm{ox}}}}WL\;\left( {{V_{{\rm{GS}}}} - {V_{{\rm{TH}}}}} \right)}}}\end{array}

Where f is the frequency, C ox is the gate oxide capacitance per unit area, q is the elementary charge, W and L are the channel length and width, respectively. [ 45,47 ]…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

et al. 2023

Adv Elect Materials

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“…Moreover, the value of a-IGZO FET is not inferior to or even better than many other transistors, such as polysilicon, amorphous silicon, organic, and MOS. [34,35] This undoubtedly makes fiber arraybased transistors highly competitive in the field of electronic devices. For example, a high-quality and stable device can effectively shield itself from additional factors and respond only to the target, which meets the requirements for constructing a highly sensitive sensing device (As demonstrated in Figure S8, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

He,

Zhu

et al. 2023

Adv Funct Materials

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Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics.

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“…Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are extensively used in switching devices and peripheral driver circuits for active-matrix liquid crystal displays (AMLCDs) owing to their low cost, high uniformity over a large-area substrate, and the maturity of their fabrication process [1]- [8]. The higher photo-sensitivity of a-Si:H TFTs under illumination by visible light in comparison to amorphous-indium-gallium-zinc-oxide (a-IGZO) favors their use in optical sensors in displays, supporting X-ray image sensing, backlighting, and optical input functions [1], [3], [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors

et al. 2019

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This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 • C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.INDEX TERMS Hydrogenated amorphous silicon thin-film transistor, long-term reliability, optical sensor.

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Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

Cited by 6 publications

References 61 publications

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors

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