Some halogen-doped calcium borate glasses containing iron have been prepared according to the percentage molar composition [(30 -x) CaO . x CaX, . 10 Fe,O, .60 B,OJ and annealed. It is found that the conduction in the semiconducting glasses is mainly due to electronic conduction. The resultsshow that the halide ions may be introduced as modifiers for CaX, concentration < 10 mol% (X = F, C1, and Br) but they are network formers at CaX, > 10mol%. It is proposed that at 10mol% the network structure for all glasses seems to be the same. The dependence of resistivity on the halide ions concentration as well as the slight variation of activation energies, could be explained on the basis of electron-lattice interaction.Mathematical expressions for fitting and describing the dependence of resistivity on CaX, concentration are deduced and formulated by the following equations: e = eo exp [ kac(1 -bc)] and Q = elo exp [+a'c(l -b'c)] for the two regions around the critical concentration.