Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°K

Meechan, C. J.; Brinkman, J. A.

doi:10.1103/physrev.103.1193

Cited by 277 publications

(30 citation statements)

References 17 publications

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“…A similar TEM work has also been done in molybdenum [23]. Resistivity measurements, although useful in identifying the temperature and activation energies of recovery stages (calculated using the Meechan-Brinkman theory [24]), do not provide a direct method of the observation of defects, their nature and how they change with different annealing conditions. This study looks to provide a more complete picture by: (1) quantifying the damage immediately after irradiation, (2) understanding the time and temperature dependence of recovery, (3) directly observing the mechanisms associated with the radiation defect recovery.…”

Section: Previous Recovery Studiesmentioning

confidence: 95%

High temperature annealing of ion irradiated tungsten

et al. 2015

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Transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500-1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W + ions, 500°C, 10 14 W + /cm 2 ) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterisation of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2-3 nm were considered for detailed analysis, among which all loops had b ¼ 1 2 h1 1 1i and were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line-loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was derived, finding E a ¼ 1:34 AE 0:2 eV for the 700-1100°C range.

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Section: Previous Recovery Studiesmentioning

confidence: 95%

High temperature annealing of ion irradiated tungsten

et al. 2015

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“…Initial decrease in average resistance was observed on annealing the Ni/Ge multilayer was possibly due to removal of defects and growth of metallic NiGe alloy layer at the interfaces. 31 Fig. 5(d) and 5(e) show a systematic correlation between the growth of alloy layer and reduction of resistance of the sample on annealing at 250 • C for different time and suggest that the growth of alloy layer reducing the resistance of sample.…”

Section: Resultsmentioning

confidence: 95%

Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

et al. 2015

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Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50%) on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.

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“…Future isochronal annealing studies should be conducted, perhaps with different soak times to permit a Meechan-Brinkman analysis 70,71 to extract the activation energies of the various annealing processes observable by EXAFS. Direct experimental measurement of these activation energies would make for an excellent comparison to first principles electronic structure based models of damage structures in δ-Pu.…”

Section: Discussionmentioning

confidence: 99%

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

Olive

Wang

Booth

et al. 2016

Journal of Applied Physics

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The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve have been determined using an amplitude-ratio method, standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to previous electrical resistivity-and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.

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Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°K

Cited by 277 publications

References 17 publications

High temperature annealing of ion irradiated tungsten

High temperature annealing of ion irradiated tungsten

Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

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