Electrical resistivity of silicon nitride produced by various methods

Silicon Heterojunction Microcells

“…2 × 10 5 cm/s) (Table S5, passivated, measured), whereas the a-Si/SiN x -passivated devices exhibit V oc measurements of 560 mV (model ERV = 5 × 10 4 cm/s) and 579 mV (model ERV = 8 × 10 3 cm/s). We present Suns- V oc data in Figure b (green crosses) given the series resistance evident in the a-Si/SiN x devices (red triangles), likely due to incomplete removal of the a-Si/SiN x coatings from the top or bottom surface after the conformal PECVD deposition . In Figure c, a typical device passivated with TiO 2 (red triangles, V oc = 561 mV) is again compared to a typical native oxide-passivated device (blue circles, V oc = 530 mV) for devices on the same wafer.…”

“…We present Suns-V oc data in Figure 5b (green crosses) given the series resistance evident in the a-Si/SiN x devices (red triangles), likely due to incomplete removal of the a-Si/SiN x coatings from the top or bottom surface after the conformal PECVD deposition. 67 In In cases involving passivation with TiO 2 , some shunting after passivation is apparent relative to the devices passivated with native oxide, possibly as a result of formation of an inversion layer. 54 Given these results for both passivation methods, we see significant improvements in V oc of 32 and 55 mV (Table S5) and ERV improvements of 2 and 3 orders of magnitude, when comparing native oxide passivation to a-Si/SiN x and TiO 2 , respectively.…”

Nanopore Fabrication via Transient High Electric Field Controlled Breakdown and Detection of Single RNA Molecules

“…As shown in Figure 2A, the circuit model is summarized into three states: approaching the state, no nanopore-formed state, and nanopore-formed state. When the pipette tip approaches the SiN x film, the air resistance (R air ) dominates the total resistance (R total ); if there are no nanopores formed when meniscus contact is established, the SiN x film resistance (R SiN x ) dominates R total , while the pipette resistance (R pipette ≪ R SiN x ) is ignored; 38 if nanopores are formed successfully, the pore resistance (R nanopore ) dominates R total and the R pipette should also be considered (Supporting Information S4: Nanopore conductance correction). 39 Hence, the formation of nanopores can be confirmed by monitoring the feedback voltage due to the resistance variation.…”

Structure, properties and applications of graphite-like hexagonal boron nitride

“…Несмотря на использование турбостратного BN горячепрессованные материалы по уровню прочности заметно уступают (в 3-5 раз) горячепрессованным и спеченным материалам на основе ковалентных соединений B 4 C [31][32][33][34], SiC [35,36] и Si 3 N 4 [37,38], что еще раз показывает сложность спекания и достижения высокого уровня механических свойств материалов на основе порошков BN.…”