Electrical resistivity of In-Sb liquid system and its relation to thermodynamic behaviour

Cho, Seung Am; Gomez, J. A.; Ichaso, Andoni; Veléz, M.H

doi:10.1007/bf01026533

Cited by 4 publications

(5 citation statements)

References 10 publications

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“…Calculated results and some reported experimental data are shown in Fig. 6 [8,9,12,13]. The calculated electrical resistivities are in consistent with the experimental data by Wang et al [8] and Blakeway et al [13] though some deviations appear in several points, and deviate evidently from the results by Wilson and Tomlinson et al [9].…”

Section: Electronic Structure Of L-in X Sb 1 − Xsupporting

confidence: 92%

“…We have performed first-principles molecular-dynamics simulations of l-In x Sb 1 − x at temperature of 973 K in order to evaluate the relationship between the short range orders and macroscopic First-Principles Expt Ref [8] Expt Ref [12] Expt Ref [13] Expt Ref9] Expt derived from Ref [9] Resistivity (μΩxcm) Sb concentration (at.%) physical properties in semiconductor melts. Calculated structure factors of l-In x Sb 1 − x are in good agreement with the available published experimental data.…”

Section: Discussionmentioning

confidence: 99%

“…For molten III-V semiconductors, many experimental results, such as viscosity, electrical resistivity etc., were reported so far [4,[8][9][10][11][12][13][14][15][32][33][34]. One goal for these measurements is that the researchers intend to deduce the temperature or composition dependence of the structure changes by analyzing the variations of the macroscopic physical properties.…”

Section: Electronic Structure Of L-in X Sb 1 − Xmentioning

confidence: 99%

“…As for molten A III -Sb (A III = Al, Ga, In), considerable experimental results of physical properties were reported so far, however, these data were not consistent with each other, especially for electrical resistivity [4,[8][9][10][11][12][13]. Glazov et al analyzed the composition dependence of viscosity and electrical resistivity of molten A III -Sb alloys and concluded that the extreme points (a maximum of the viscosity and a minimum of electrical conductivity) were found in the stoichiometric compounds of A III -Sb alloys.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Relationship between the short-range order and electrical resistivity in liquid indium-antimony

2012

Journal of Non-Crystalline Solids

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Section: Electronic Structure Of L-in X Sb 1 − Xsupporting

confidence: 92%

Section: Discussionmentioning

confidence: 99%

Section: Electronic Structure Of L-in X Sb 1 − Xmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Relationship between the short-range order and electrical resistivity in liquid indium-antimony

2012

Journal of Non-Crystalline Solids

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“…There have been enourmous efforts to understand the behaviors of diverse physicochemical properties of different solution mixtures [l]. While many physical properties of a solution system such as electronic specific heat [2], electrical conductivity or resistivity [3], magnetic susceptibility [4], elasticity [ 5 ] , density and surface tension [6], viscosity (71 and Debye temperature [8] etc. have been measured, only some other thermophysical properties such as diffusivity D , volume V, lattice specific heat C,, enthalphy H , entropy S and free energy, F o r G , are known to be explicitly related between their integral and partial quantities.…”

Section: Introductionmentioning

confidence: 99%

Chiotti integration of Gibbs‐Duhem relation and unequivocal determination of limiting partial thermodynamic quantities at infinite dilution of binary solution system

Cho

Ochoa

1997

Ber Bunsenges Phys Chem

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Chiotti has made a breakthrough in the thermodynamic theory of solution after nearly a century of frustration. Activity α,i, activity coefficient γi, Darken function αi = In γi/(l‐xi)2 and other partial thermodynamic quantities \documentclass{article}\pagestyle{empty}\begin{document}$ \Delta \bar Q_i^{{\rm{xs}}} \;{\rm{and}}\;\Delta \bar Q_i $\end{document}, where i = Bi and Sn, of binary liquid Bi‐Sn alloy solution system are critically assessed by means of the authentic Chiotti integration, as all those quantities oscillate along composition which made their procurement through classical routes, Gibbs‐Duhem and Darken integrations, impossible. The unambiguous partial quantities at their infinite dilution are obtained from the genuine Chiotti slopes. Interrelations among partial quantities in terms of composition and temperature are presented in detail. We reveal that the apparent Raoultian and Henrian α, vs. Xi behaviors are false and then demonstrate neither Bi nor Sn complies with the Raoult's law and Henry's law. The molten Bi‐Sn system is the athermal type but the behavior of the solution is rather complex and it is definitely neither subregular nor regular solution. In this context the subregular and various symmetrical solutions are systematically developed in relation to function αi and discussed in great detail. A new method of classification of complex solution systems beyond subregular and regular in terms of the difference quantities \documentclass{article}\pagestyle{empty}\begin{document}$ (\Delta \bar Q_B^{{\rm{xs}}} {\rm{-}}\Delta \bar Q_A^{xs} ) $\end{document} is proposed.

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Transient torque method: A fast and nonintrusive technique to simultaneously determine viscosity and electrical conductivity of semiconducting and metallic melts

Ban

Lin

et al. 2004

Review of Scientific Instruments

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A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of liquid metals and molten semiconductors. The experimental setup of the transient torque method is similar to that of the oscillation cup method. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate around its vertical axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numberically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4°C. The results were in excellent agreement with published data. The method is nonintrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer to measure just the viscosity of the melt or as a rotating magnetic field method to determine the electrical conductivity of a melt or a solid if desired.

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Electrical resistivity of In-Sb liquid system and its relation to thermodynamic behaviour

Cited by 4 publications

References 10 publications

Relationship between the short-range order and electrical resistivity in liquid indium-antimony

Relationship between the short-range order and electrical resistivity in liquid indium-antimony

Chiotti integration of Gibbs‐Duhem relation and unequivocal determination of limiting partial thermodynamic quantities at infinite dilution of binary solution system

Transient torque method: A fast and nonintrusive technique to simultaneously determine viscosity and electrical conductivity of semiconducting and metallic melts

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