1993
DOI: 10.1016/0921-4526(93)90645-m
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Electrical resistivity and effect of pressure on the thermal expansion of a single crystal of YbCu2Si2

Abstract: Electrical resistivity p(T) and thermal expansion Al/l were measured for the intermediate valence compound (IVC) YbCu2Si 2 and its counterpart LuCu2Si 2 between 4.2 K and 300 K. It was found that the thermal expansion coefficient a(T) has a negative minimum around 31 K (= Tram ) at atmospheric pressure and Tm~ . decreases with increasing pressure at the rate 0 Tm~,/0 T = -0.45 K/kbar.

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Cited by 13 publications
(5 citation statements)
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“…1, T 2 -dependence of the resistivity is shown. Resistivity is not linear to T 2 , consistent with the previous result at T44:2 K [4]. Moreover, it has been revealed that resistivity persists to be non-linear against T 2 down to the lowest temperatures (1.8 K), as can be seen in the inset (a) of Fig.…”
Section: Resultssupporting
confidence: 85%
See 1 more Smart Citation
“…1, T 2 -dependence of the resistivity is shown. Resistivity is not linear to T 2 , consistent with the previous result at T44:2 K [4]. Moreover, it has been revealed that resistivity persists to be non-linear against T 2 down to the lowest temperatures (1.8 K), as can be seen in the inset (a) of Fig.…”
Section: Resultssupporting
confidence: 85%
“…In YbCu 2 Si 2 , however, such Fermi-liquid state has not been established experimentally. Electrical resistivity (r) using a single crystal reports the absence of T 2 behavior (T: temperature) above 4.2 K, which should typically be observed for Fermi liquid state [4]. On the other hand, T 2 dependence is observed at least below 4 K by using polycrystalline samples [5].…”
Section: Introductionmentioning
confidence: 94%
“…The increase of the Eu contribution with decreasing temperature is an indication of the existence of a Kondo-type state of the Eu ions in Lu x Eu 1−x Cu 2 Si 2 , and not just a consequence of the way in which the temperature dependence of the resistance is represented. It may be noted that our data show the absence of residual resistance in LuCu 2 Si 2 down to 4.2 K, whereas the temperature dependence of the resistance of LuCu 2 Si 2 presented in [13] indicates the existence of residual resistance up to 15 K. Depending on which data are used for LuCu 2 Si 2 , different results will be obtained when extracting the Eu contribution from the experimental values of the relative resistance of Lu x Eu 1−x Cu 2 Si 2 (where a domain of saturation is observed at low temperature). In our case, the relatively large values of the resistance in the helium temperature region undoubtedly point to the existence of an additional mechanism of carrier dispersion, namely, of the Kondo type.…”
Section: Resultscontrasting
confidence: 63%
“…The thermal expansion data of Ref. 16 are consistent with this prediction, although not quite conclusive, as they focused on a higher temperature region. There also are materials where hydrostatic pressure drives the system away from ferromagnetic order, while uniaxial stress favors it; an example is UCoAl [17].…”
supporting
confidence: 74%