Electrical recordings from rat cardiac muscle cells using field-effect transistors

Sprössler, Christoph; Denyer, M.; Britland, Stephen; Knoll, Wolfgang; Offenhäusser, Andreas

doi:10.1103/physreve.60.2171

Cited by 97 publications

(57 citation statements)

References 19 publications

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“…18 Previous studies have discussed several different signal shapes of extracellular recordings in detail. 10,11 These studies found that peaks like ͑1͒ and ͑2͒ were present in all cases while differences were observed for the latter, slower components ͑3͒ and ͑4͒, as in our study. Sprössler et al 11 The numbering is used in accordance to Fig.…”

supporting

confidence: 53%

“…8 This cell type is well suited for our studies in two respects: ͑i͒ the cell line is robust and well understood, which allows convenient studies of the fundamental physics of the coupling and ͑ii͒ it is closely related to cardiomyocytes which have been used for in vitro pharmacological studies. 9,10 We compare our signals with ones from planar field-effect transistors ͑FETs͒ 10,11 and associate them with the point-contact model 12 in order to explain their shape physiologically. This analysis is important to understand how to associate the recorded signals to the cellular mechanisms generating them.…”

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confidence: 99%

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Action potentials of HL-1 cells recorded with silicon nanowire transistors

Eschermann

Stockmann

Hueske

et al. 2009

Applied Physics Letters

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Silicon nanowire (NW) transistors were fabricated in a top-down process. These devices were used to record the extracellular potential of the spontaneous activity of cardiac muscle HL-1 cells. Their signals were measured by direct dc sampling of the drain current. An improved signal-to-noise ratio compared to planar field-effect devices was observed. Furthermore the signal shape was evaluated and could be associated to different membrane currents. With these experiments, a qualitative description of the properties of the cell-NW contact was obtained and the suitability of these sensors for electrophysiological measurements in vitro was demonstrated.

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confidence: 53%

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confidence: 99%

Action potentials of HL-1 cells recorded with silicon nanowire transistors

Eschermann

Stockmann

Hueske

et al. 2009

Applied Physics Letters

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“…It exhibits spontaneous contraction and firing of action potentials in cell culture. Thus it is a well suited model system to study bioelectronic devices [33,34]. We demonstrate the validity of our model and we show evidence for an improved seal resistance of HL-1 cells on nanocavity sensors compared to planar cell-chip interfaces.…”

Section: Introductionmentioning

confidence: 70%

“…Inhomogeneities of the membrane attached to a sensor are a prerequisite for the recording of cellular activity [29]. Inhomogeneities of cardiac cells on sensors are discussed elsewhere in detail [33,34]. A scaled conductance of the ion channels in the attached membrane by a factor χ i where i = Na, K, Ca…”

Section: A Propagation Of Action Potentialsmentioning

confidence: 99%

Frequency-dependent signal transfer at the interface between electrogenic cells and nanocavity electrodes

et al. 2012

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We present a model to describe the response of chip-based nanocavity sensors during extracellular recording of action potentials. These sensors feature microelectrodes which are embedded in liquid-filled cavities. They can be used for the highly localized detection of electrical signals on a chip. We calculate the sensor's impedance and simulate the propagation of action potentials. Subsequently we apply our findings to analyze cell-chip coupling properties. The results are compared to experimental data obtained from cardiomyocyte-like cells. We show that both the impedance and the modeled action potentials fit the experimental data well. Furthermore, we find evidence for a large seal resistance of cardiomyocytes on nanocavity sensors compared to conventional planar recording systems.

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“…The time courses of all FET signals were the same for both types of FET ͑n = 14 cells͒. They resemble a combination of different signal components, which were already previously described: 11 ͑i͒ capacitive transients at the onset and offset of the voltage stimulus, caused by capacitive coupling of the stimulus through the attached membrane, [17][18][19] ͑ii͒ an increase of V FET to a steady-state amplitude, ͑iii͒ a partially instantaneous decline of V FET at the end of the stimulus ͑Ohmic coupling͒, and ͑iv͒ a slower relaxation of V FET , that is not observed for I M ͑electrochemical coupling͒. In all recorded signals, the amplitude for n-and p-FETs differed from each other, whereas the time course was always the same for both transistor signals.…”

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confidence: 86%

Single cell recordings with pairs of complementary transistors

Meyburg

Wrobel

Stockmann

et al. 2006

Applied Physics Letters

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Floating gate field-effect transistors ͑FETs͒ for the detection of extracellular signals from electrogenic cells were fabricated in a complementary metal oxide semiconductor process. Additional passivation layers protected the transistor gates from the electrolyte solution. To compare the signals from n-and p-FETs, two electronically separated, but locally adjacent transistors were combined to one measuring unit. The paired sensing area of this unit had the dimension of a single cell. Simultaneous recordings with n-and p-channel floating gate FETs from a single cell exhibited comparable amplitudes and identical time courses. The experiments indicate that both types of FETs express similar sensitivities. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2219339͔Recording extracellular electrical activity from living cells with semiconductor devices is a powerful tool that holds great promise for biomedical and neuroelectronic applications as well as for the development of whole-cell biosensors. In contrast to classical electrophysiological methods, these devices allow stable long-term, noninvasive recordings of electrical activity from single cells or networks of cells with multiple recording sites. For extracellular recordings, two main concepts were developed in the past: multielectrode arrays 1,2 ͑MEAs͒ with metallized contacts and field-effect transistor 3,4 ͑FETs͒ arrays. When using FETs, the gate oxide provides a high impedance input. The presented FET designs had either nonmetallized, oxidic gates ͑also called open gates͒ 4,5 or metallized gates. The latter were either in direct contact to the electrolyte solution 6,7 or had electrically insulated, so-called floating gates. [8][9][10] In recent works, we examined the extracellular recordings of a human embryonic kidney cell line ͑HEK293͒ expressing a voltage-gated K + channel using either nonmetallized, open-gate n-or p-channel FETs. 11 In general, these extracellular signals showed distinct differences. The n-FET signals were significantly larger in amplitude and we observed a slower time course compared to the p-FET signals. In order to investigate these discrepancies, we developed a pair of electronically separated, but locally adjacent floating gate n-and p-FETs for the recording of extracellular signals in this work. Each of these sensing units exposed a paired sensing area with the dimension of a single cell. This sensing area was isolated from the electrolyte solution by a thin, thermally grown oxide.The fabrication process of our floating gate field-effect transistors ͑FGFETs͒ was partially adopted from a twin-well, 1.3 m, double polycrystalline silicon, double metal complementary metal oxide semiconductor ͑CMOS͒ process of the Microfabrication Laboratory, University of California at Berkeley. 12 After the self-aligned drain-source implantations the wafers were covered with 550 nm silicon dioxide, deposited by standard low-pressure chemical vapor deposition ͑LPCVD͒. Drain and source contacts as well as contacts to the lower gate layer-outside ...

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Electrical recordings from rat cardiac muscle cells using field-effect transistors

Cited by 97 publications

References 19 publications

Action potentials of HL-1 cells recorded with silicon nanowire transistors

Action potentials of HL-1 cells recorded with silicon nanowire transistors

Frequency-dependent signal transfer at the interface between electrogenic cells and nanocavity electrodes

Single cell recordings with pairs of complementary transistors

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