Electrical Pumping of Perovskite Diodes: Toward Stimulated Emission

Cho, Changsoon; Antrack, Tobias; Kroll, Martin H.; An, Qingzhi; Bärschneider, Toni; Fischer, Axel; Meister, Stefan; Vaynzof, Yana; Leo, Karl

doi:10.1002/advs.202101663

Cited by 33 publications

(40 citation statements)

References 39 publications

(74 reference statements)

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“…An effective scattering coefficient is added to a recently presented optical model containing PR effect ( 15 , 20 , 39 ). Refer to the Supplementary Materials for the details.…”

Section: Methodsmentioning

confidence: 99%

Effects of photon recycling and scattering in high-performance perovskite solar cells

et al. 2021

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“…An effective scattering coefficient is added to a recently presented optical model containing PR effect ( 15 , 20 , 39 ). Refer to the Supplementary Materials for the details.…”

Section: Methodsmentioning

confidence: 99%

Effects of photon recycling and scattering in high-performance perovskite solar cells

et al. 2021

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“…An ASE threshold of 34.6 µJ cm −2 is achieved here, remarkably lower than reported ASE thresholds in functional PeLEDs. [ 35 ] Figure 5b‐d shows that PeLEDs with DFB gratings support lasing operation under pulsed optical excitation (excitation wavelength of 532 nm, pulse duration of 40 ps, repetition rate of 1 kHz), which is strongly transverse‐electric (TE) polarized (Figure S10, Supporting Information). A clear threshold behavior in the input‐output plot at an excitation energy density of 16.3 µJ cm −2 is observed for PeLEDs with KI additives, and a concomitant spectral collapse to a sharp laser line.…”

Section: Potential To Achieve Electrically Pumped Perovskite Laser Di...mentioning

confidence: 99%

Nanosecond‐Pulsed Perovskite Light‐Emitting Diodes at High Current Density

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be grown epitaxially on specific substrates, silicon not being one of them.Metal halide perovskite light-emitting diodes (PeLEDs) hold the potential for a new generation of display and lighting technology, [1][2][3][4][5][6][7] featuring high color quality, energy efficiency, and low manufacturing cost. Furthermore, perovskites can be deposited from solutions/inks, which means that they can be deposited on virtually any substrate including silicon. Perovskite LEDs have been shown to be promising for optical communications. [8] However, the operation speed of PeLEDs is still relatively slow, with electroluminescence (EL) rise times of several hundred nanoseconds or longer. [9][10][11][12] The slow operation speed and response time of PeLEDs limit their potential for a wider scope of applications, such as interchip and intrachip optical communications, currently realized with more expensive technologies using III-V semiconductors.Reducing the EL rise time of PeLEDs will not only increase their potential utility for applications in optical communications, but also contribute to the development of an electrically driven perovskite laser diode, which would be transformative in the optoelectronics realm as a low-cost laser source compatible with silicon microelectronics. Despite significant progress toward this goal, [13][14][15][16] electrically driven lasing in perovskites has not yet been achieved. One challenge is that the current density reported to date does not exceed the estimated threshold required for lasing. Reducing the EL rise time would enable shorter pulse operation, making it possible for PeLEDs to operate at higher current densities due to reduced Joule heating. [10,17] Furthermore, high-speed pulsed operation of PeLEDs will allow us to probe electrically stimulated chargecarrier dynamics and reveal mechanisms that prevent PeLEDs from operating efficiently or lasing under electrical excitation. This understanding is particularly important as optically pumped lasing death has been observed for perovskite thin films within 25 ns, [18] and optical and electrical excitations are considerably distinct.Both extrinsic factors (e.g., parasitic capacitance and resistance) and intrinsic factors (e.g., long recombination lifetime of charge carriers in the light-generating process) can limit the speed of PeLEDs. However, the speed of PeLEDs reported so far appears to have been dominantly constrained by extrinsic factors, [8][9][10][11][12] excluding the possibility to probe more intrinsic While metal-halide perovskite light-emitting diodes (PeLEDs) hold the potential for a new generation of display and lighting technology, their slow operation speed and response time limit their application scope. Here, high-speed PeLEDs driven by nanosecond electrical pulses with a rise time of 1.2 ns are reported with a maximum radiance of approximately 480 kW sr −1 m −2 at 8.3 kA cm −2 , and an external quantum efficiency (EQE) of 1% at approximately 10 kA cm −2 , through improved device configuration designs and material consi...

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“…The exceptional optoelectronic properties combined with the ability to process metal halide perovskite semiconductors from solution have led to comprehensive research results in the field of (opto)electronic applications, including photovoltaic devices, [1][2][3] light-emitting diodes (LEDs), [4][5][6] LASER applications, [7][8][9] as well as X-ray [10][11][12] and photodetectors. [13][14][15] To a large extent, these optoelectronic properties, such as the bandgap, the relative position of the energy levels, and the carrier mobility, [16] depend on the ionic composition of the material.…”

Section: Introductionmentioning

confidence: 99%

Using Combinatorial Inkjet Printing for Synthesis and Deposition of Metal Halide Perovskites in Wavelength‐Selective Photodetectors

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Metal halide perovskites have received great attention in recent years, predominantly due to the high performance of perovskite solar cells. The versatility of the material, which allows the tunability of the bandgap, has led to its use in light‐emitting diodes, photo, and X‐ray detectors, among other optoelectronic device applications. Specifically in photodetectors, the tunability of the bandgap allows fabrication of spectrally selective devices. Utilizing a combinatorial inkjet printing approach, multiple perovskite compositions absorbing at specific wavelengths in a single printing step are fabricated. The drop‐on‐demand capabilities of inkjet printing enable the deposition of inks in a precise ratio to produce specific perovskite compositions in the printed thin film. By controlling the halide ratio in the compositions, a mixed halide gradient ranging from pure MAPbI3 via MAPbBr3 to MAPbCl3 is produced. The tunability in the absorption onset from 410 to 790 nm is demonstrated, covering the whole visible spectrum, with a precision of 8 nm steps for MAPb(BrxCl1−x)3 compositions. From this range of mixed halide perovskites, photodetectors which show spectral selectivity corresponding to the measured absorption onset are demonstrated, paving the way for use in a printed visible light spectrometer without the need for a dispersion element.

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Electrical Pumping of Perovskite Diodes: Toward Stimulated Emission

Cited by 33 publications

References 39 publications

Effects of photon recycling and scattering in high-performance perovskite solar cells

Effects of photon recycling and scattering in high-performance perovskite solar cells

Nanosecond‐Pulsed Perovskite Light‐Emitting Diodes at High Current Density

Using Combinatorial Inkjet Printing for Synthesis and Deposition of Metal Halide Perovskites in Wavelength‐Selective Photodetectors

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