Electrical Property of Mo-Doped VO₂ Nanowire Array Film by Melting−Quenching Sol−Gel Method

Abstract

Mo-doped VO(2) nanowire array film with good thermochromic properties was prepared by melting-quenching followed by heat treatment in a vacuum. The formation of the new microstructure is related to the cleavage of the oxide lamella along (001) and (100) plane with large interplanar spacing. Mo doping results in the loss of V(4+)-V(4+) pairs and destabilizes the semiconductor phase and consequently lowers the semiconductor-to-metal transition temperature T(c) from 64 to 42 degrees C. Because of enhancement of the electron concentration due to the presence of Mo donors, the Fermi level shifts toward the conduction band, resulting in the decrease of activation energy E(a), hence, temperature coefficient of resistance.

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

“…VO 2 : W nanorods have been deposited by wet chemistry 92 and VO 2 : Mo nanorods have been made by a sol-gel based technique. 93 Furthermore nanosheets ͑nanoplates, nanoflakes͒ of VO 2 have been made by wet chemistry, 94,95 gas phase synthesis, 84 and thermal reduction; 96 such particles can be approximated as higheccentricity oblate particles.…”

Thin Films for Advanced Glazing Applications

“…Niobium has also been investigated, but it was found to be less effective than tungsten. The Tc of the films was typically decreased by 2 °C per at % doping [164], by 13 °C per 0.4% at [165] and by 15 °C per 2 at % Nb doping [166]. Other dopants explored include magnesium [167] and cerium [168] which decreased Tc by 3 °C and 4.5 °C, respectively per at % doping each.…”

“…Molybdenum doping has also been explored and found to decrease T c by 3 • C [152] and by 15 • C [163] per at % doping. Doping with 3 mol % Mo lowered T c to 42 • C [164]. Niobium has also been investigated, but it was found to be less effective than tungsten.…”

Self‐heating and External Strain Coupling Induced Phase Transition of VO2 Nanobeam as Single Domain Switch

“…However, it offers the possibility of self-heating to T SPT , and builds a qualitative relationship between the applied voltage and the raised temperature. In additional, a typical pronounced hysteresis of the I-V curve was observed in Figure 2 a when the voltage scan was reversed, which exhibits similar behavior of temperature dependence of the resistivity, [ 23 ] and such a decreased T SPT is due to the residual heating effect from the high temperature raised after transition. [ 24 ] Besides the temperature-controlled transition, strain as an additional external stimulus can be introduced into the nanobeam by bending the substrate since the mechanical behavior of the entire structure is determined by the substrate.…”