Electrical Properties of β -FeSi₂/Si Hetero-Diode Improved by Pulsed Laser Annealing

Abstract

β-phase iron disilicide (β-FeSi 2 ) was obtained on n-type silicon (111) substrate by using excimer laser annealing (ELA). β-phase crystal which have good electrical properties was grown within a narrow annealing condition such as energy density. All samples were annealed by excimer laser show n-type characteristic. Graded junction was formed in FeSi 2 /Si hetero diode.