Electrical properties of β-BaCu2S2

Kurosaki, Ken; Uneda, Hironori; Muta, Hiroaki; Yamanaka, Shinşuke

doi:10.1016/j.jallcom.2004.05.005

Cited by 14 publications

(12 citation statements)

References 17 publications

(19 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the X-ray diffraction pattern of the sample, it is confirmed that a single phase sample of ␤-BaCu 2 S 2 with the space group I4/mmm is obtained [8]. The lattice parameters of ␤-BaCu 2 S 2 evaluated from the X-ray diffraction pattern are shown in Table 1; they agree well with literature data [13].…”

Section: Resultssupporting

confidence: 81%

“…In our previous study [8], the electrical resistivity and Seebeck coefficient of ␤-BaCu 2 S 2 have been reported. The ␤-BaCu 2 S 2 has a unique crystal structure, in which, Cu 2 S 2 layers are sandwiched by Ba sheets [9,10] like a natural superlattice structure.…”

Section: Introductionmentioning

confidence: 98%

“…The ␤-BaCu 2 S 2 has a unique crystal structure, in which, Cu 2 S 2 layers are sandwiched by Ba sheets [9,10] like a natural superlattice structure. We have discovered that ␤-BaCu 2 S 2 has a moderate power factor (P max = 1.53 × 10 −4 W m −1 K −2 at around 700 K) [8]. Since the ␤-BaCu 2 S 2 compound has layered structure, it is supposed that the thermal conductivity is relatively low.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermoelectric properties of β-BaCu2S2

Kurosaki

Uneda

Muta

et al. 2005

Journal of Alloys and Compounds

Self Cite

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermoelectric properties of β-BaCu2S2

Kurosaki

Uneda

Muta

et al. 2005

Journal of Alloys and Compounds

Self Cite

View full text Add to dashboard Cite

“…BaCu 2 S 2 exists in two structures, a low temperature orthorhombic structure (Pnma, α-BaCu 2 S 2 ) 280 and high temperature layered tetragonal structure (I4/mmm, β-BaCu 2 S 2 ). 281 The BaCu 2 S 2 reviewed here as a wide band gap semiconductor is α phase, and we note that β-BaCu 2 S 2 is primarily investigated for its thermoelectric properties 282 . As shown in Figure 3.6a, Ba occupies 7-fold S-coordinated sites while Cu atoms are tetrahedrally coordinated by S. In contrast with the layered delafossite structure, Cu-centered tetrahedrons are spatially distributed in the 3D crystal.…”

Section: α-Bam 2 Ch 2 Pnma Structurementioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

show abstract

“…Due to the relative abundance of Ba and S, its low cost, and unique chemical nature [2], barium sulfide (BaS) is an important sulfide compound for which usage is hindered by a lack of thermodynamic understanding of its chemical interactions with other sulfides [5][6][7][8][9], including Cu 2 S. Despite such uncertainty, its usage in combination in the solid-state with Cu 2 S has been put forth for new high temperature superconductors [5] photovoltaic materials [10], or thermoelectrics [11,12]. Independently [13], the addition of barium sulfide to copper (I) sulfide (Cu 2 S) at 56.8 mol% and 1379 K proved to form a possible electrolyte for liquid copper extraction via electrolysis, where the addition of BaS is thought to decrease the electronic conductivity of Cu 2 S. Recent results [14] with addition of La 2 S 3 to this composition ((BaS) 54 -(Cu 2 S) 31 -(La 2 S 3 ) 15 ) enabled the extraction of Mo, Re and Cu using direct electrolysis of such electrolyte with higher efficiency.…”

Section: Introductionmentioning

confidence: 99%