Electrical Properties of ZnO-Doped Nd(Co_1/2Ti_1/2)O₃ Thin Films Prepared by RF Magnetron Sputtering

Abstract

The electrical properties and microstructures of ZnO-doped Nd(Co1/2Ti1/2)O3 thin films prepared by rf-magnetron sputtering on indium tin oxide (ITO)/glass substrates at different rf powers and Ar/O2 ratios have been investigated. X-ray diffraction pattern analysis showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited the ZnO-doped Nd(Co1/2Ti1/2)O3 orientation perpendicular to the substrate surface, and the uniformity of surface morphologies of the film increased with decreasing Ar partial pressure and rf power. At an Ar/O2 ratio of 80/20 and a rf power of 250 W, the ZnO-doped Nd(Co1/2Ti1/2)O3 films possess a dielectric constant of 28.6 at 1 kHz, a dissipation factor of 0.02 at 1 kHz, and a leakage current density of 3.6×10-10 A/cm2 at an electrical field of 20 kV/cm.

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