Electrical Properties of Zn_xMn_3-xO₄Ceramics for Application as IR Detectors

Abstract

Zn x Mn 3-x O 4 (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200℃ for 12 h, cooled at a rate of 2℃/min to 800℃, and subsequently quenched to room temperature. We investigated the electrical properties of Zn x Mn 3-x O 4 specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn