Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation

Rare-earth oxide thin films for gate dielectrics in microelectronics

“…Although several studies involve dielectric characterization of different oxides, such as Sm 2 O 3 [55], Y 2 O 3 [69], La 2 O 3 [107], or Lu 2 O 3 [57], few studies compare the dielectric performance of different rare-earth metal oxides obtained by the same growth technique. Päiväsaari et al [96], compared the growth and capacitance-voltage behaviour of Nd, Sm, Eu, Gd, Dy, Ho, Er and Tm oxides grown by ALD on silicon.…”

DC-conduction mechanism in crystalline oxidised La and La–Mn films grown on p-Si substrate

“…Lanthana (La 2 O 3 ) is being one of the candidates for gate dielectric to replace SiO 2 due to its suitable insulating properties [1][2][3][4][5][6][7], which are sufficient to fit to the requirements for alternative insulators [8]. Furthermore, lanthana thin-film insulators have excellent low leakage currents; 10 −4 to 10 −7 A/cm 2 at about 1 MV/cm [6,7,[9][10][11][12].…”

“…Furthermore, lanthana thin-film insulators have excellent low leakage currents; 10 −4 to 10 −7 A/cm 2 at about 1 MV/cm [6,7,[9][10][11][12]. However, it is important to know the detailed conduction mechanism in La 2 O 3 films to ensure their reliability.…”

“…However, still little is known about the mechanism of leakage current transfer in La 2 O 3 films grown on Si substrates, although, a few investigations have been recently carried out on ultrathin films prepared by electron-beam evaporation technique [6,7,21]. For vacuum- [7] and nitrogen-annealed [6] La 2 O 3 film, it was reported that the Al-gate-voltage dependence of the leakage current was governed by the space-charge-limited-current (SCLC)-or Poole-Frenkel (PF)-conduction mechanism.…”

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

“…According to the ITRS, lanthanum oxide (La 2 O 3 ), which is a member of rare earth oxide (REO), was classified into the next group of potential candidates to succeed Hf-based oxides [2]. Thus, La 2 O 3 has attracted much attention in recent years and detailed analyses were reported [3,4,5,6,7,8,9].…”