Electrical properties of the high-pressure phases of gallium and indium tellurides

Shchennikov, Vladimir V.; Savchenko, K. V.; Popova, S. V.

doi:10.1134/1.1131343

Cited by 11 publications

(7 citation statements)

References 12 publications

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“…Namely, a small portion of Al 3 p -Te 5 p bonding contributes resonant component to the Al-Te bond. This is also found from the Ga-Te and In-Te bonds in the quintuple layered (c-ST-like) lattice23. That is, cation M with more p valence electrons (larger p-p bonding component in M-Te bond) shall reduce the rigidity of M-centered octahedron and ease the local structure distortion to surrounding c-ST lattice22.…”

mentioning

confidence: 67%

“…Like some tetrahedral Ge atoms found in c-GST27, fourfold Al atoms also exist in c-Al x ST. The tetrahedral Al atom utilizes its three valence electrons with one transfer electron from Te (Sb) to form covalent bonds upon sp 3 hybridization1123. It is reasonable to infer that nearly 65% of the total Al atoms undergo reversible tetrahedron-octahedron rearrangements during phase transition.…”

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confidence: 99%

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Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Xia

Ding

Rao

et al. 2015

Sci Rep

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Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based on ab initio simulations and nuclear magnetic resonance evidences. By comparing the local chemical environments around Al atoms in respective amorphous and crystalline Al-Sb-Te phases, we believe that Al-centered motifs undergo reversible tetrahedron-octahedron reconfigurations in phase transition process. Such Al-centered local structure rearrangements significantly enhance thermal stability of amorphous phase compared to that of undoped Sb-Te materials, and facilitate a low-energy amorphization due to the weak links among Al-centered and Sb-centered octahedrons. Our studies may provide a useful reference to further understand the underlying physics and optimize performances of all IIIA metal doped Sb-Te phase change materials, prompting the development of NOR/NAND Flash-like phase change memory technology.

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confidence: 67%

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confidence: 99%

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Xia

Ding

Rao

et al. 2015

Sci Rep

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“…In comparison, high-pressure studies on the isostructural In 2 Se 3 led to interesting phenomena, such as pressure-induced metalization and superconductivity (SC) together with the enhancement of T c during decompression . Given the structural similarity with In 2 Se 3 , investigating In 2 Te 3 might also lead to other interesting high-pressure properties. , …”

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confidence: 99%

Superconductivity in In₂Te₃ under Compression Induced by Electronic and Structural Phase Transitions

Zhen

Deng

Liu

et al. 2022

J. Phys. Chem. Lett.

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Indium telluride (In2Te3) is a typical layered material among III–IV families that are extremely sensitive to pressure and strain. Here, we use a combination of high-pressure electric transport, Raman, XRD, and first-principles calculations to study the electronic properties and structural evolution characteristics of In2Te3 under high pressure. Our results reveal the evidence of isostructure electronic transitions. First-principle calculations demonstrate that the evolution of phonon modes is associated with the transition from semiconductor to metal due to the increase in the density of states near the Fermi level. The pressure-induced metalization as a precursor monitors the structural phase transition, and then the superconductivity is produced. Further, in decompression, T c slightly increased and remained at 3.0 GPa, and then the disorder is present and the superconductivity is suppressed. Our work not only perfects the superconducting phase of the In–Te system under pressure but also provides a reference for further superconducting research and applications.

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“…In addition, other A 2 B 3 -type metal chalcogenides belonging to the III-VI group (e.g., Ga 2 S 3 , Ga 2 Te 3 , In 2 S 3 , In 2 Se 3 , In 2 Te 3 , etc.) have been reported to undergo the semiconductor-tometal phase transition under high pressure [12,13,16,17]. Therefore, it is worthwhile to explore whether Ga 2 Se 3 exhibits metallic property under high pressure.…”

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confidence: 99%

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Hong

Dai

et al. 2021

Crystals

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A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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Electrical properties of the high-pressure phases of gallium and indium tellurides

Cited by 11 publications

References 12 publications

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Superconductivity in In₂Te₃ under Compression Induced by Electronic and Structural Phase Transitions

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

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Electrical properties of the high-pressure phases of gallium and indium tellurides

Cited by 11 publications

References 12 publications

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Superconductivity in In2Te3 under Compression Induced by Electronic and Structural Phase Transitions

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

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Superconductivity in In₂Te₃ under Compression Induced by Electronic and Structural Phase Transitions