Electrical properties of the graphene/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>-SiC</mml:mtext></mml:mrow></mml:math>(0001) interface probed by scanning current spectroscopy

Sonde, Sushant; Giannazzo, Filippo; Raineri, V.; Yakimova, Rositsa; Huntzinger, Jean-Roch; Tiberj, Antoine; Camassel, Jean

doi:10.1103/physrevb.80.241406

Cited by 106 publications

(76 citation statements)

References 23 publications

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“…The device was then measured immediately after the cleaning process and five days later (whilst stored in a desiccator with <20% relative humidity), where transport measurements revealed n-type behavior with n e = 2.55 × 10 12 and n e = 4.71 × 10 11 cm −2 , respectively. The restored n-type conductivity of cleaned 1 LG on SiC(0001) is consistent with theory and experimental work presented by various other groups [6,102,103]. Table 2.…”

Section: Influence Of External Conditionssupporting

confidence: 90%

Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

2013

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Abstract:We present local electrical characterization of epitaxial graphene grown on both Si-and C-faces of 4H-SiC using Electrostatic Force Microscopy and Kelvin Probe Force Microscopy in ambient conditions and at elevated temperatures. These techniques provide a straightforward identification of graphene domains with various thicknesses on the substrate where topographical determination is hindered by adsorbates and SiC terraces. We also use Electrostatic Force Spectroscopy which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we study evolution of a layer of atmospheric water as a function of temperature, which is accompanied by a significant change of the absolute surface potential difference. We show that the nanoscale wettability of the material is strongly dependent on the number of graphene layers, where hydrophobicity increases with graphene thickness. We also use micron-sized graphene Hall bars with gold electrodes to calibrate work function of the electrically conductive probe and precisely and quantitatively define the work functions for single-and double-layer graphene.

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Section: Influence Of External Conditionssupporting

confidence: 90%

Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

2013

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“…Recent nanoscale measurements of the current transport across EG/4H-SiC ͑0001͒ interface indicated that a laterally inhomogeneous distribution of positive charge is associated to these dangling bonds between the ZL and the bulk substrate. 21 This interface charge can explain both the lower average value and the larger spread in the local l gr values in the case of EG-SiC than in the case of DG-SiC. It is also worth noting that l gr on DG/SiC is on average ϳ4ϫ than on DG/SiO 2 and the spread of the l gr values are comparable in the two cases.…”

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confidence: 78%

“…19 We used optical contrast microscopy and atomic force microscopy to identify single layers of graphene ͑SLG͒ on DG-SiO 2 and on DG-SiC, 20 while micro-Raman spectroscopy along with conductive atomic force microscopy was used to identify SLG in EG-SiC. 21 The electron mean free path at room temperature was "locally" evaluated at different positions on the SLG by a recently demonstrated approach based on capacitance measurements made with the probe of a scanning capacitance microscope. 6 In the case of DG-SiO 2 , the SiO 2 film works as the gate dielectric and the n + Si substrate works as the semiconductor of a metal-insulator-semiconductor capacitor.…”

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confidence: 99%

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

Sonde

Giannazzo

Vecchio

et al. 2010

Applied Physics Letters

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The electron mean free path (l(gr)) is "locally" evaluated by scanning capacitance spectroscopy on graphene obtained with different preparation methods and on different substrates, i.e., graphene exfoliated from highly oriented pyrolitic graphite (HOPG) and deposited (DG) on 4H-SiC(0001) and on SiO2 and epitaxial graphene grown on 4H-SiC (0001) (EG). l(gr) in DG on SiC was more than four times larger than in DG on SiO2. The improved mean free path is explained by the higher permittivity of SiC compared to SiO2, yielding a better dielectric screening of charged-impurities, and by the weaker coupling of graphene two-dimensional-electron-gas with surface polar phonons of SiC. On the other hand, l(gr) on EG is on average similar to 0.4 times that on DG-SiC and exhibits large variations from point to point, due to the presence of a laterally inhomogeneous positively charged layer at EG/SiC interface.Original Publication:S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini and V Raineri, Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas, 2010, APPLIED PHYSICS LETTERS, (97), 13, 132101.http://dx.doi.org/10.1063/1.3489942Copyright: American Institute of Physicshttp://www.aip.org

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“…Also, by operating in current spectroscopy mode, i.e., by performing local I-V measurements, the Schottky barrier height (SBH) of epitaxial graphene grown on H-SiC was estimated to be 0.36 ± 0.1 eV, which is 0.49 eV lower than the barrier of graphene exfoliated from HOPG and deposited on the same substrate (0.85 ± 0.06 eV). The result was explained as a Fermi-level pinning effect above the Dirac point in epitaxial graphene due to the presence of positively charged states [87]. Similarly, C-AFM allowed the mapping of the spatial inhomogeneities of the SBH and the ideality factor of contacts on MoS 2 , due to spatial variations in the density and energy of MoS 2 surface states, and to correlate local resistivity with local SBH [88].…”

Section: Electrical Modesmentioning

confidence: 99%

Advanced Scanning Probe Microscopy of Graphene and Other 2D Materials

Musumeci

2017

Crystals

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Two-dimensional (2D) materials, such as graphene and metal dichalcogenides, are an emerging class of materials, which hold the promise to enable next-generation electronics. Features such as average flake size, shape, concentration, and density of defects are among the most significant properties affecting these materials' functions. Because of the nanoscopic nature of these features, a tool performing morphological and functional characterization on this scale is required. Scanning Probe Microscopy (SPM) techniques offer the possibility to correlate morphology and structure with other significant properties, such as opto-electronic and mechanical properties, in a multilevel characterization at atomic-and nanoscale. This review gives an overview of the different SPM techniques used for the characterization of 2D materials. A basic introduction of the working principles of these methods is provided along with some of the most significant examples reported in the literature. Particular attention is given to those techniques where the scanning probe is not used as a simple imaging tool, but rather as a force sensor with very high sensitivity and resolution.

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Electrical properties of the graphene/4H-SiC(0001) interface probed by scanning current spectroscopy

Cited by 106 publications

References 23 publications

Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

Advanced Scanning Probe Microscopy of Graphene and Other 2D Materials

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