Electrical Properties of Tellurium at the Melting Point and in the Liquid State

Epstein, A. S.; Fritzsche, H.; Lark–Horovitz, K.

doi:10.1103/physrev.107.412

Cited by 96 publications

(40 citation statements)

References 15 publications

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“…By measuring the electrical conductivity and the thermoelectric power of liquid selenium He~lkels and AiIaczuk (14,15) have shown this elementary substance to be a semiconductor in the liquid state with a forbidden energy gap of 2.31 ev as conlpared to 1.8 ev for the solid. Epstein, Fritzsche, and LarkIlorovitz (16,17,18) have measured the electrical conductivity, the thermoelectric power and the Hall coefficient of pure tellurium a t the melting point and in the liquid state: they find a sharp decrease in conductivity on passing from the liquid to the solid state. Their experi~lle~ltal results indicate that the semiconducting properties persist in the liquid state and that a graded transition to metallic properties takes place a t higher temperatures.…”

Section: Exp ( -E / K T )mentioning

confidence: 99%

The Electrical Conductivity of Liquid Tin: (Ii) Sulphide

Boutin¹,

Bourgon²

1961

Can. J. Chem.

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'I'he electrical conductivity "v" of tin (11) sulphidc in the liquid state has bee11 measured using a capillary type cell. Both a-c. and d-c. methods \lrere ~~s e d .The conductivity of SnS increases reg~~larly \\rith t e~n p e r a t~~r e , from approximately 24 ohm-I cm-I a t 895' C to 31.2 ohm-' c~n-I a t 930' C. The similarity of results obtained with both a-c. and d-c. methods, the positi\;e te~nperature coefficient of conductivity, the high value of the cor~ductivity and the absence of electrolysis effects when passing heavy currents i n the melt lead to the conclusion that SnS remains a semiconductor in the liquid state. The value of the energy gap has been calculated t o be 1.9 ev for the liquid as compared to the value 1.2 e.v for the solid. Conductivity nleasurements have been lirnited t o the temperature of appros~mately 935' C I~ecause of the decomposition of SnS a t higher tenlperatures. INTRODUCTIONStudy of the electrical properties of liquid inorganic salts and oxides has shown t h a t these chemical compounds are often ionic in the liquid state a s evidenced by the high value of the conductivities, the positive tenlperature coefficients of conductivity, and the high current efficiencies ( 1 , 2 , 3 ) . T h e electrical conductivity of a few metallic sulphides in the liquid state has been investigated: NiS (9), Bi2S3 (9), and FeS (4, 5 , 7 ) have been reported to behave a s typical metallic conductors while Cu2S ( 4 , 5 , 6) and TlsS (10) have been shown t o be semiconductors. Liquid antimony (111) sulphide SbSSP has a lnixecl conductivity, ionic and electronic (8).Tin (11) sulphide SnS is Iinown to be a semiconductor in the solid state (11) and has been reported to possess mixed conductivity in the liquid state (9). In order to deterlnine whether this compound retains its semiconductivity in the liquid state it was planned to stucl!~ its electrical conductivity more tl~oroughly than was clone by previous worlcers. EXPERIMENTAL Prcpurutiolt of SnST h e tin (11) sulphide used ill this study was prepared b y direct synthesis from the elements: "Reagent" grade tin and recrystallized sulphur were usecl. T h e tin sulphide so obtained contains free sulphur and some SnS2. Consequently, the crude sulphide mas heated under vacuum a t 450° C t o eliminate the free sulphur and melted under a nitrogen atmosphere a t 1000° C, this temperature being maintained between 1 and 2 hours in order to decompose the tin (IV) sulphide to tin (11) sulphide and sulphur. T h e furnace temperature was then brought down to 890' C and a partial vacuum was maintained over the melt t o eliminate the last traces of sulphur. T h e tin (11) sulphide was then distilled a t the same temperature under high vacuum using a graphite condenser. T h e tin (11) sulphide thus prepared has a metallic appearance and is completely soluble in concentrated I-ICI. Two batches of sulphide were prepared and showed identical X-ray powder patterns (114.8-mm camera, Cu radiation, Ni filter): these patterns were strictly identical with the l a ...

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Section: Exp ( -E / K T )mentioning

confidence: 99%

The Electrical Conductivity of Liquid Tin: (Ii) Sulphide

Boutin¹,

Bourgon²

1961

Can. J. Chem.

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“…We now apply these ideas to (a) expanded liquid Rg21, 24-26 a n d (b) liquid Te#9, [27][28][29][30][31][32][33][34] For Hg, analysis of R and a by Even and Jortner 25 ' 26 shows that the propagation regime extends from 13.6 to 11 g/cm 3 in density p, and that the diffusion regime extends from 11 to 9.3 g/cm 3 in p. Their identification of the diffusion regime rested on Eq. (1) and in particular on the correlation of the Hall mobility with the Hall constant.…”

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confidence: 99%

Inhomogeneous Transport Regime in Disordered Materials

1973

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We propose the existence of an inhomogeneous transport regime in the disordered materials in which a gradual metal-semiconductor transition occurs. This regime is subdivided into pseudometallic and pseudosemiconducting parts by a percolation threshold. On the basis of an effective-medium theory, we propose that the pseudometallic regime falls in the density range 8.2-9.3 g/cm 3 in liquid Hg and in the temperature range 1200°K to below 670°K in liquid Te.

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“…Therefore, it has been assumed that the interaction along the chain is strong and covalent, while between the chains is weak. Some papers claim that the inter-chain interaction is van der Waals (vdW) type 5,8,[11][12][13][14][15][16][17] . In anisotropic materials, the transport along weak interaction direction is usually much slower than that along chemical bond directions.…”

Section: Introductionmentioning

confidence: 99%

Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction

2018

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In anisotropic materials, the electrical and atomic transport along the weak interaction direction is usually much slower than that along the chemical bond direction. However, Te, an important semiconductor composed of helical atomic chains, exhibits nearly isotropic electrical transport between intrachain and interchain directions. Using first-principles calculations to study bulk and few-layer Te, we show that this isotropy is related to similar effective masses and potentials for charge carriers along different transport directions, benefiting from the delocalization of the lone-pair electrons. This delocalization also enhances the interchain binding, and thus facilitates diffusion of vacancies and interstitial atoms across the chains, which together with the fast intrachain diffusion enable rapid self-healing of these defects at low temperature. Interestingly, the interstitial atoms diffuse along the chain via a concerted rotation mechanism. Our work reveals the unconventional properties underlying the superior performance of Te while providing insight into the transport in anisotropic materials.

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Electrical Properties of Tellurium at the Melting Point and in the Liquid State

Cited by 96 publications

References 15 publications

The Electrical Conductivity of Liquid Tin: (Ii) Sulphide

The Electrical Conductivity of Liquid Tin: (Ii) Sulphide

Inhomogeneous Transport Regime in Disordered Materials

Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction

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