Electrical properties of Si–LiNbO3 heterostructures grown by radio-frequency magnetron sputtering in an Ar+O2 environment

Sumets, M.; Иевлев, В. М.; Kostyuchenko, А. V.; Vakhtel, V.M.; Канныкин, С. В.; Kobzev, A.P.

doi:10.1016/j.tsf.2013.12.005

Cited by 18 publications

(11 citation statements)

References 29 publications

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Section: Resultssupporting

confidence: 65%

“…Analysis of X-ray pattern demonstrates that TA of SiLiNbO 3 heterostructures leads to re-crystallization of the films along with increasing in the average grain size up to 55 nm. Apart from this, a disappearance of the texture occurs to compare with as-grown films possessing high [18]. Also, similar to the sample LN-T, TA treatment brings about the formation LiNb 3 O 8 phase.…”

Section: Resultsmentioning

confidence: 76%

“…Note that films obtained at lower reactive gas pressure do not manifest an inhomogeneous layer [17]. As regards the sample LN3, a highly conducting intermediate SiO 2 layer is formed between Si substrate and LiNbO 3 film grown at the similar sputtering conditions [18]. RBS data (not presented) demonstrates out that TA does not affect elemental composition of the studied films.…”

Section: Resultsmentioning

confidence: 86%

“…7) the average lateral dimension of the in homogeneities lies in the range 150-250 nm that is three times greater in comparison with as grown films [18]. TA does not affect the average roughness (about 14 nm) what close to the result obtained for as-grown heterostructures like LN2 [18]. Analysis of X-ray pattern demonstrates that TA of SiLiNbO 3 heterostructures leads to re-crystallization of the films along with increasing in the average grain size up to 55 nm.…”

Section: Resultsmentioning

confidence: 95%

“…2), TA gives rise to the portion of LiNb 3 O 8 in films. Based on the calculation using the ratio of peaks of the material to Table 2 Elemental composition of films related to the sample LN1 (see Table 1 Table 3 Elemental composition of films related to the sample LN1-T (see Table 1) Structural properties of the LN2 and LN3 samples have been reported in our previous works [17,18], so at the present paper we have investigated similar properties of LN2-T and LN3-T samples. Analysis of the X-ray diffraction results for LN2-T sample demonstrates (see Fig.…”

Section: Resultsmentioning

confidence: 99%

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Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Sumets

Kostyuchenko

Иевлев

et al. 2015

J Mater Sci: Mater Electron

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C-oriented polycrystalline lithium niobate (LiNbO 3 ) films have been deposited on Si substrate by the radio-frequency magnetron sputtering method in an Ar atmosphere and Ar ? O 2 gas mixture. All as-grown LiNbO 3 films manifested positive fixed oxide charge regardless of the sputtering conditions. Donor centers are formed in Si substrate because of diffusion of O 2 molecules during sputtering process. Thermal annealing (TA) of the deposited films leads to increase in the surface roughness and grain size as well as formation of LiNb 3 O 8 phase in the studied films. Also, TA resulting in the decline of positive oxide charge due to the diffusion of oxygen molecules into LiNbO 3 films from air and out-diffusion from Si substrate.

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Section: Resultssupporting

confidence: 65%

Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 86%

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Sumets

Kostyuchenko

Иевлев

et al. 2015

J Mater Sci: Mater Electron

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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Sputtering condition effect on structure and properties of LiNbO3 films

Sumets

Kostyuchenko

Иевлев

et al. 2015

J Mater Sci: Mater Electron

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Polycrystalline LiNbO 3 films were grown on various substrates by the radio-frequency magnetron sputtering (RFMS) method and ion-beam sputtering (IBS) method at different sputtering conditions. Films formed on the substrates situated within erosion zone (plasma effect) manifested textured structure. When plasma effect became insignificant only LiNbO 3 films with random size orientation were formed during the RFMS process and IBS process with an increase in the size of the crystallites. Reactive gas pressure as part of plasma effect has a profound effect on the films' properties. When gas pressure was increased greatly, grain size declined two fold and the average surface roughness of the grown films doubled. At the higher gas pressure Li-poor phase LiNb 3 O 8 appeared along with LiNbO 3 during the growth process. As a result, the film texture disappeared. Single phase LiNbO 3 films with two-axes (epitaxial) texture are formed on (111)Ag epitaxial film during the RFMS process at the ion assisted conditions.

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Electrical properties of Si–LiNbO3 heterostructures grown by radio-frequency magnetron sputtering in an Ar+O2 environment

Cited by 18 publications

References 29 publications

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Sputtering condition effect on structure and properties of LiNbO3 films

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Electrical properties of Si–LiNbO3 heterostructures grown by radio-frequency magnetron sputtering in an Ar+O2 environment

Cited by 18 publications

References 29 publications

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Sputtering condition effect on structure and properties of LiNbO3 films

Contact Info

Product

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About

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications