Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency

Dong, Haiyun; Zhang, Yang; Cui, Lei; Guan, Min; Li, Yiyang; Zhu, Zhanping; Wang, Baoqiang; Zeng, Yiping

doi:10.1016/j.jcrysgro.2019.125377

Cited by 2 publications

(2 citation statements)

References 21 publications

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“…InSb 1−x Bi x exhibits n-type conductivity when the E F level is closer to the conduction band edge (E C ) and p-type conductivity when it is closer to the valence band edge (E V ). The position of the Fermi level relative to E i can be expressed as [26]:…”

Section: Be-doped Insb 1−x Bixmentioning

confidence: 99%

“…Here, N A is the acceptor concentration, k B is the Boltzmann constant, T is the temperature, and n i is the intrinsic carrier concentration. Dong et al [26] found that equation ( 7) is able to qualitatively describe the n-p transition in InSb:Be grown on GaAs substrate at growth conditions similar to those of a normal InSb on InSb substrate, i.e. growth temperature of 360 • C-380 • C and V/III ratio of about 1.2-1.5.…”

Section: Be-doped Insb 1−x Bixmentioning

confidence: 99%

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Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Loke,

Tan,

Wicaksono

et al. 2024

Semicond. Sci. Technol.

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We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb1-x Bi x ) material. Utilizing the molecular beam epitaxy (MBE) method, we achieved high Bi composition uniformity. This method also enables the InSb1-x Bi x to be grown on semi-insulating (SI) GaAs substrate, effectively preventing parallel electrical conduction during Hall effect measurement. Our findings reveal that InSb1-x Bi x doped with silicon (Si) and tellurium (Te) consistently exhibit n-type conductivity. In contrast, InSb1-x Bi x doped with beryllium (Be) exhibit a transition from n to p type conductivity, subjected to the Be doping level and the measurement temperature. Based on these observations, we proposed an empirical model describing the dependence of InSb1-x Bi x electron mobility on carrier concentration, temperature, and Bi composition, specifically for Si and Te-doped InSb1-x Bi x samples. These insights gained from this study hold potential application in photodetector device simulations.

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Section: Be-doped Insb 1−x Bixmentioning

confidence: 99%

Section: Be-doped Insb 1−x Bixmentioning

confidence: 99%

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Loke,

Tan,

Wicaksono

et al. 2024

Semicond. Sci. Technol.

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Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy

Zhou

Zhang

et al. 2020

Appl. Opt.

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The influence of doping on the ultrafast carrier dynamics in InSb has been studied by time-resolved terahertz spectroscopy with photogenerated carrier densities from 1.5 × 1 0 18 to 9.5 × 1 0 19 c m − 3 at 800 nm. The photoinduced absorption and carrier recovery process show doping type dependence. The carrier recovery time of intrinsic InSb is greater than that of p-doped InSb but less than that of n-doped InSb at low carrier densities. At high carrier densities, compared with intrinsic InSb, the doped InSb is more prone to transient Auger recombination, which indicates that the appearance of the fast decay process depends on the carrier densities. The photoinduced absorption of terahertz probe pulse of n-doped InSb is significantly less than that of p-doped and intrinsic InSb; however, that of p-doped InSb is close to that of intrinsic InSb, which demonstrates that the high concentration of electrons can accelerate the efficiency of transient Auger recombination. Our analysis provides assistance to the design, manufacture, and improvement of photovoltaic detectors.

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Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency

Cited by 2 publications

References 21 publications

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy

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