Electrical properties of polycrystalline silicon films formed from amorphous silicon films by flash lamp annealing

ITO‐induced Columnar Polycrystalline Silicon Thin Films by CVD

“…C) however, rises rapidly when the wavelength is higher than 400 nm but less than 675 nm, then declines slightly with a slight fluctuation (28.9% − 30.5%) when the wavelength is between 675 nm and 900 nm. Due to the reflection and refraction of the crystal lattice, the amorphous Si has higher transmittance than the polycrystalline silicon, which explains why the transmittance (B) of thin films on common glass substrates is larger than the transmittance (C) on ITO thin films. The minimum transmittance of pattern C in the visible region is only 3%.…”

On the methodology of calculating volume charge density in a MIFGMOS substrate using Poisson’s equation

“…The first step generates a capacitive effect (Medina-Vazquez et al, 2016) with the floating gate. According to the Polysilicon Depletion Effect (Rios et al, 1994;Arora et al, 1995;University of California, 2017) and the Grain Boundary Theory (Seto, 1975;Nishikawa et al, 2011), when a positive potential is applied, the capacitances create a positive charge density on the floating gate.…”

A New Scheme for the Detection of Optical Radiation in the External Photoemissive Mode: Device Implementation

“…Resistivities have been measured for heavily doped ntype polycrystalline silicon with doping concentrations of 3x10 19 /cm 3 and grain sizes comparable to those measured in this work (16 nm) with values close to the films with 16 and 13 at. % Ag [1], but resistivities in the 0.02 -0.03 Ω-cm range typically occur in heavily doped polycrystalline silicon films with larger grain sizes of 75 nm [12].…”

“…The resistivities are also limited by the grain sizes, with films having smaller grains giving rise to more grain boundaries and larger resistivities. Grain size is a function of film preparation and can vary over a wide range, typically from tens of nanometers [1] to tenths of microns [2] depending on how the films are fabricated, with resistivities no smaller than 10 -2 Ω-cm regardless of the doping. Films with 100 nm grain sizes with dopant concentrations of 3x10 19 /cm 3 have been fabricated with a room temperature resistivity of 5x10 -2 Ω-cm [1] and will be used to compare with films prepared in this work.…”

“…Grain size is a function of film preparation and can vary over a wide range, typically from tens of nanometers [1] to tenths of microns [2] depending on how the films are fabricated, with resistivities no smaller than 10 -2 Ω-cm regardless of the doping. Films with 100 nm grain sizes with dopant concentrations of 3x10 19 /cm 3 have been fabricated with a room temperature resistivity of 5x10 -2 Ω-cm [1] and will be used to compare with films prepared in this work. The results presented here came from a study of Ag/n-Si composite films that are being investigated for another application that is discussed below.…”