Electrical Properties of p‐Type ZnSnAs<sub>2</sub> Crystals at Low Temperatures

Kesamanly, F. P.; Nasledov, D. N.; Rud, Yu. V.

doi:10.1002/pssb.19650080338

Cited by 18 publications

(14 citation statements)

References 4 publications

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“…A pronounced maximum at ∼120 K is distinctively recognizable in R o (T) plot. There are two different opinions regarding the presence of this peak: Kesamanly et al [16] suggested that it is due to the two types holes, heavy and light holes, which participate in conductivity while Isomura et al [11,12] argued that it is due to simultaneous valence band and impurity band conduction. Our own data and analyses of the transport properties of ZnSnAs 2 thin films support the impurity band model proposed by Isomura and Tomioka.…”

Section: Methodsmentioning

confidence: 99%

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Asubar¹,

Yang

Uchitomi

2009

Phys. Status Solidi (c)

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The previously reported transport properties data of the undoped ZnSnAs2 grown on semi‐insulating InP substrates by molecular beam epitaxy (MBE) have been reviewed and analysed. We have found out that the temperature dependence of Hall coefficient and resistivity can be well explained by the impurity band model proposed by Isomura and Tomioka. By using the said model, we were able to resolve the experimentally obtained carrier concentration pexp and mobility μexp into valence band carrier concentration pv with mobility μv and acceptor band carrier concentration pa with mobility μa. The computed apparent values papp and μapp are in good agreement with pexp and μexp, respectively. To support the validity of the model, we also have confirmed the presence at low temperatures of negative magnetoresistance expected if impurity band conduction is predominant. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Asubar¹,

Yang

Uchitomi

2009

Phys. Status Solidi (c)

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“…1 The band gap of the nitrides ranges from 1.8 eV of InN to 6.3 eV of AlN, making them promising candidates for light emitting diodes ͑LEDs͒ and laser diodes ͑LDs͒ in the ultraviolet, blue, and blue-green wavelength regimes. There has been a growing interest in the optical properties of nitride films due to several recent advances.…”

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confidence: 99%

Theoretical prediction of GaN lasing and temperature sensitivity

Fang

Chuang

1995

Applied Physics Letters

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We present a theoretical prediction of the threshold current density and the temperature sensitivity of a GaN laser operating in the intrinsic band-to-band transition. We calculate the material gain and spontaneous emission spectrum for unintentionally doped bulk GaN under carrier injection. All stimulated and spontaneous emission calculations are compared to those of bulk GaAs. The transparency carrier density of GaN is found to be more than four times that of GaAs, and the momentum matrix element for optical transitions in bulk GaN is estimated to be about one-third the value in GaAs. In addition, the differential gain is approximately four times smaller in GaN. These differences are attributed to the larger effective masses of the electrons and holes in GaN. The calculated characteristic temperature T0 of the threshold current density for a GaN laser ranges from 185 to 220 K, which agrees well with the recently observed data from optical pumping experiments.

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“…Figure 5 shows the variation of the room temperature thermoelectric power a, with carrier concentration n. The full line shows results calculated from the present scattering parameter values, the values of N A and NsQs being varied smoothly with n in accordance with the results shown in Table 1, etc. Experimental values for RR 1 and RR2 are shown together with data from the work of Kudman and Steigmeier (31) and Kesanianly et al (6). It is seen that there is good agreement between calculated and experimental results.…”

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confidence: 61%

“…Thus in low field transport phenomena below 300"C, the effects of the subsidiary bands are negligible. Electron transport properties have been [ studied in some detail (5)(6)(7)(8). However, there are still discrepancies in the values of various parameters, e.g., effective mass variation with temperature, acoustic deformation potential, etc., and the agreement between theory and experiment is not always good.…”

Section: Introductionmentioning

confidence: 99%

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Electron transport properties of InP

Lee¹,

Basinski²,

Juravel³

et al. 1980

Can. J. Phys.

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Measurements of electrical conductivity o and Hall coefficient R,, have been madeas afunction of temperature in the range room temperature to 250°C and as a function of magnetic field up to 3.2 T on single crystal n-type samples of InP with carrier concentrations in the range 3.5 x 10" to 1.2 x m-). Theoretical calculations of o and R,, have been made using the method of Fletcher and Butcher and the resulting values fitted to the experimental data by using various scattering parameters as adjustable. The parameters so obtained have then been used to predict further magnetoresistance values and values of thermoelectric power and Nernst-Ettingshausen coefficient. The predicted values of magnetoresistance and thermoelectric power show good agreement with experimental values but not those of the Nernst-Ettingshausen coefficient, possibly due to experimental problems.On a effect& des mesures de la conductivite electriqueo et du coefficient Hall R,,, en fonction de la temperature dans I'intervalle allant de la temperature du laboratoire a 250°C et en fonction du champ magnetique jusqu'i 3.2 T , sur des echantillons monocristallins de type n de InP avec des concentrations de porteurs de charge se situant dans I'intervalle 3.5 x 10" a 1.2 x loZ4 m-3. On a fait des calculs theoriques d e o et R,, en utilisant la methode de Fletcher et Butcher, et I'on a adapt6 les resultats de ces calculs aux donntes experimentales en ajustant les valeurs de differents parametres de diffusion. Ces paramtttres ont Cte ensuite utilisks pour predire d'autres valeurs de la magnetoresistance, ainsi que des valeurs du pouvoir thermoelectrique et du coefficient Nernst-Ettineshausen. On a un bon accord entre les valeurs oredites et les donnees experimentales pour la magnetoresistance et le pouvoir thermoelectrique, mais pas pour le coefficient Nernst-Ettingshausen, possiblement a cause de difficultks experimentales. Can. J. Phys., 58,923 (1980) Can. J. Phys. Downloaded from www.nrcresearchpress.com by CANADIAN FREE ACCESS 2010 + BACK FILES on 11/17/14 For personal use only.

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Electrical Properties of p‐Type ZnSnAs₂ Crystals at Low Temperatures

Cited by 18 publications

References 4 publications

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Theoretical prediction of GaN lasing and temperature sensitivity

Electron transport properties of InP

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Electrical Properties of p‐Type ZnSnAs2 Crystals at Low Temperatures

Cited by 18 publications

References 4 publications

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films

Theoretical prediction of GaN lasing and temperature sensitivity

Electron transport properties of InP

Contact Info

Product

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About

Electrical Properties of p‐Type ZnSnAs₂ Crystals at Low Temperatures

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films