Electrical properties of non-stoichiometric tin oxide films obtained by the d.c. reactive sputtering method

Irregular Electrical Conduction Types in Tin Oxide Thin Films Induced by Nanoscale Phase Separation

“…Both patterns were normalized by the peak from the (0006) plane of the Al 2 O 3 positioned at 41.72°. 15 Therefore, it is speculated that the LO sample (positioned at a lower diffraction angle) and HO sample (higher diffraction Fig. The peak difference in the samples is distinctly distinguished by the high angle peaks located at 80°.…”

“…In general, the electrical conductivity of p-SnO is attributed to O interstitials labeled as SnO 1+x , and that of n-SnO 2 originating from O vacancies labeled as SnO 2Àx . 15 Therefore, it is speculated that the LO sample (positioned at a lower diffraction angle) and HO sample (higher diffraction angle) predominantly have SnO 1+x and SnO 2Àx phases, respectively. Interestingly, the tin oxide peak from the HO sample was separated into two peaks, as shown in the HRXRD results.…”

Reproducibility of Properties of SnOx Thin Films Prepared by Reactive Sputtering

“…For example, for undoped films the minimum of resistivity was obtained at 33% of oxygen concentration for a substrate temperature of 523 K, while for a substrate temperature of 423 K the minimum of resisitivity appeared at about 15% of oxygen. 4 The undoped films with the minimum of resistivity contained the SnO2 phase together with a large amount of amorphous phase (Figure 4). effect of substrate temperature, Figure 4a referring to a substrate temperature of 523K and Figure 4b to a value of423 K, The samples with about the minimum resistance were characterized by a small increase of conductivity within an increase of temperature in the range of 40-400 K, The TCR defined in the temperature range between 300 K and 400 K was negative and about (100-500) x 10-6/I The amorphous films were less transparent than those with a small amount of a polycrystalline SnOz as can be seen in Figure 5.…”

Influence of the thickness on structural, magnetic and electrical properties of La0.7Ca0.3MnO3 thin film

“…It is observed that the properties of these films such as resistivity, CMR, transition temperature (T C ) and magnetic properties strongly depends on preparation conditions, thickness, substrate temperature and substrate used for film deposition, etc. Among the several deposition techniques such as a sol-gel [8], spray pyrolysis method [9] and RF sputtering method [10,1,[11][12][13], etc., the pulsed laser deposition (PLD) technique is one of the widely used techniques to grow thin film of such materials. In PLD, the stoichiometry of the target is authentically reproduced in the film if the conditions during the deposition of the film are judiciously picked.…”