Electrical properties of neutron-irradiated silicon and GaAs commercial diodes

Omar, Nuurul Iffah Che; Hasbullah, Nurul Fadzlin; Rashid, Nahrul Khair Alang Md; Abdullah, J. B.

doi:10.1109/isiea.2012.6496678

Cited by 6 publications

(7 citation statements)

References 21 publications

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“…The value of R s is comparable with other measurements found in literature, although there is a wide spread of reported values (e.g. [19]). We were not able to find a reliable value of G for the 1N4148 diode in the literature.…”

Section: Resultssupporting

confidence: 90%

“…The two parameters are strongly correlated so that an overestimation of the exponential characteristic constant involves an underestimation of the factor A and the E G value is 80 meV lower than the one expected and with the disposable literature data [23][24][25]. This could be explained in terms of a high doping level at 2 to 3× -10 cm 19 3 .…”

Section: S Be Gmentioning

confidence: 61%

“…It is not easy to find fabrication details of the 1N4148 diode and particularly information on the doping levels. Based exclusively on [21], the 1N4148 is fabricated by growing a slightly doped (< -10 cm 16 3 ) n-type Si micro-metric layer onto an heavily doped substrate + n at dopant concentration of -10 cm 19 3 . On the other side of n-layer an acceptor dopant is then diffused forming a p layer with doping density of -10 cm 19 3 .…”

Section: Determination Of Energy Band Gap From Temperature Dependencementioning

confidence: 99%

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On a rapidly converging iterative algorithm for diode parameter extraction from a singleIVcurve

et al. 2017

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We measure the I-V curve of a p-n diode on a range of currents where the well known Shockley model exhibits its shortcoming. We show that the behavior of the I-V curve, on the whole range of currents, can be captured by a modified four parameter Shockley model; the parameters of the model are obtained by a numerical procedure, consisting of an iterative rapidly converging nonlinear fitting algorithm. The fit returns sound estimates of the parameters for I-V curves, as function of temperature. The method is validated on a well known 1N4148 diode, but it can also be applied to any other devices described by single-diode models such as solar cells. We also show that the knowledge of the temperature dependence of the parameters can be used to obtain a quantitative estimate of other physical properties of the system, such as the energy gap of junction materials.

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Section: Resultssupporting

confidence: 90%

Section: S Be Gmentioning

confidence: 61%

Section: Determination Of Energy Band Gap From Temperature Dependencementioning

confidence: 99%

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On a rapidly converging iterative algorithm for diode parameter extraction from a singleIVcurve

et al. 2017

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“…An increase in these defects implies an increase in the density of the recombination centres; this reduces the minority carrier lifetime [36,46]—time taken by a minority carrier to recombine. Consequently, there is a decrease of the current gain [16] because there was an increase in the leakage current; resulting from an increase in the density of the generation-recombination centres [48]. In other words, the creation of more recombination centres in the form of isolated and clustered defects [47] could be assumed to be diluting the charge concentration.…”

Section: Phototransistorsmentioning

confidence: 99%

A Review: Photonic Devices Used for Dosimetry in Medical Radiation

Damulira

Yusoff

Omar

et al. 2019

Sensors

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Numerous instruments such as ionization chambers, hand-held and pocket dosimeters of various types, film badges, thermoluminescent dosimeters (TLDs) and optically stimulated luminescence dosimeters (OSLDs) are used to measure and monitor radiation in medical applications. Of recent, photonic devices have also been adopted. This article evaluates recent research and advancements in the applications of photonic devices in medical radiation detection primarily focusing on four types; photodiodes – including light-emitting diodes (LEDs), phototransistors—including metal oxide semiconductor field effect transistors (MOSFETs), photovoltaic sensors/solar cells, and charge coupled devices/charge metal oxide semiconductors (CCD/CMOS) cameras. A comprehensive analysis of the operating principles and recent technologies of these devices is performed. Further, critical evaluation and comparison of their benefits and limitations as dosimeters is done based on the available studies. Common factors barring photonic devices from being used as radiation detectors are also discussed; with suggestions on possible solutions to overcome these barriers. Finally, the potentials of these devices and the challenges of realizing their applications as quintessential dosimeters are highlighted for future research and improvements.

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“…A possible solution to output degradation would be annealing the LEDs to "flush out" the vacancies and interstitials. During the annealing process, both the vacancies Bombardments during Compton scattering and photoelectric effects could displace charge (electrons) from their original lattice structural locations [26,54]. This results in the absence of electrons in their normal lattice positions (vacancies) and electrons occupying lattice positions where they are not meant to be (interstitials) [54].…”

Section: Degradation Of C-v Responsementioning

confidence: 99%

Comparison of Current–Voltage Response to Diagnostic X-rays of Five Light-Emitting Diode Strips

et al. 2019

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Light-emitting diodes (LEDs) have miscellaneous applications owing to their low cost, small size, flexibility, and commercial availability. Furthermore, LEDs have dual applicability as light emitters and detectors. This study explores the current–voltage (C–V) response of LED strips exposed to diagnostic x-rays. Cold white, warm white, red, green, and blue LED strip colors were tested. Each strip consisted of 12 LED chips and was connected to a multimeter. The variable diagnostic x-ray parameters evaluated were kilovoltage peak (kVp), milliampere-seconds (mAs), and source-to-image distance (SID). The radiation dose was also measured using a dosimeter simultaneously exposed to x-rays perpendicularly incident on the strips. Lastly, the consistency of C–V responses, and any possible degradation after 1–2 months was also analyzed. Each LED strip color was ranked according to its C–V response in each of the investigated parameters. The LED strip color with the best cumulative rank across all the tested parameters was then examined for reproducibility. Our findings revealed that the C–V responses of LED strips are (a) generally low but measurable, (b) inconsistent and fluctuating as a consequence of kVp variations, (c) positively correlated to mAs, (d) negatively correlated to SID, and (e) positively correlated to dose. Overall results suggested cold white LED strip as most feasible for x-ray detection—in comparison to examined colors. Additionally, the reproducibility study using the cold white LED strip found a similar trend of C–V response to all variables except kVp. Outcomes indicate that LED strips have the potential to be exploited for detecting low dose (~0–100 mGy) diagnostic x-rays. However, future studies should be carried out to increase the low C–V signal.

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Electrical properties of neutron-irradiated silicon and GaAs commercial diodes

Cited by 6 publications

References 21 publications

On a rapidly converging iterative algorithm for diode parameter extraction from a singleIVcurve

On a rapidly converging iterative algorithm for diode parameter extraction from a singleIVcurve

A Review: Photonic Devices Used for Dosimetry in Medical Radiation

Comparison of Current–Voltage Response to Diagnostic X-rays of Five Light-Emitting Diode Strips

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