Electrical properties of narrow gap low carrier concentration p-Hg1−xCdxTe

Caporaletti, O.; Micklethwaite, W. F. H.

doi:10.1016/0375-9601(82)90879-9

Cited by 24 publications

(3 citation statements)

References 4 publications

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“…I n cases where a surface inversion layer can form it becomes essential to secure good ohmic contacts to the bulk of the sample [32]. This is supported also by studies [73] carried out on p-Cd,Hgl-,Te samples (0.20 5 z 5 0.36, N , -Nd = 3 x loi5 to 2 x 1016 cm-3). The samples were annealed preliminarily for a long time (1000 h a t 400 "C, sample thickness 0.5 nim) and checked for compositional uniformity by measuring their I R transmission.…”

Section: The Effect Of Surface On Tho Transport Phenomena In Cmtmentioning

confidence: 95%

Transport Anomalies in CdxHg1−xTe

Ivanov-Omskiĭ

Berchenko

Elizarov

1987

Phys. Stat. Sol. (a)

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Section: The Effect Of Surface On Tho Transport Phenomena In Cmtmentioning

confidence: 95%

Transport Anomalies in CdxHg1−xTe

Ivanov-Omskiĭ

Berchenko

Elizarov

1987

Phys. Stat. Sol. (a)

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“…Numerous workers have published Hall effect results for Hg 1Àx Cd x Te samples with low carrier concentrations which are not dominated by anomalous effects as well as Hg 1Àx Cd x Te alloys with higher carrier concentrations (Schenk, 1990;Caporaletti and Micklethwaite, 1982;Finkman and Nemirovsky, 1986;Gold and Nelson, 1986;Meyer et al, 1987). Typical values for x ¼ 0.2 and 77 K are reproduced in Table 3.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Furthermore, it results in much larger carrier concentrations. From Schenk (1990), Gold and Nelson (1986), Finkman and Nemirovsky (1986), Caporaletti and Micklethwaite (1982), and Meyer et al (1987).…”

Section: N-and P-type Dopingmentioning

confidence: 99%

Molecular Beam Epitaxy of HgCdTe Materials and Detectors

Becker¹,

Casselman²,

Grein³

et al. 2011

Comprehensive Semiconductor Science and Technology

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Galvanomagnetic Properties of p‐Hg_1−xCd_xTe

Höschl

Moravec

Prosser

et al. 1988

Physica Status Solidi (b)

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A three level model for one divalent acceptor (Hg vacancy) and one monovalent acceptor (foreign atom) is suggested. The hole mobility is determined for p-like wave functions (polar phonons and ionized impurities). Low temperature (10 to 300 K ) galvanomagnetic measurements of undoped pHgl-,Cd,Te (5 FZ 0.2) are reported. A simultaneous analysis of the hole concentration and Hall mobility data in the region 10 t o 100 K and Hall coefficient and conductivity data in the region 100 to 300 K yield ionization energies of z 6 meV and z 0.7Eg (energy gap) for the Hg vacancy and = 12 meV for the foreign acceptor. I n the temperature region 100 to 300 K the mobility of electrons is determined, too. Es wird ein Drei-Niveau-Model1 fur einen divalenten Akzeptor (Hg-Leerstelle) und einen monovalenten Akzeptor (Fremdatom) vorgesohlagen. Die Locherbeweglichkeit wird fur p-Wellenfunktionen (polare Phononen und ionisierte Storstellen) bestimmt. Galvanomagnetische Messungen bei tiefen Temperaturen (10 bis 300 K) von undotiertem p-Hgl -,Cd,Te ( z = 0,2) werden mitgeteilt. Eine gleichzeitige Analyse der Locherkonzentrations-und Hallbeweglichkeitswerte im Bereich 10 bis 100 K und des Hallkoeffizienten und der Leitfahigkeitswerte im Bereich 100 bis 300 K ergibt Ionisierungsenergien von 2 6 meV und = 0,7E, (Energieliicke) fur die Hg-Leerstelle und = 12 meV fur den Fremdakzeptor. I m Temperaturbereich 100 bis 300 K wird die Beweglichkeit der Elcktronen ebenfalls bestimmt.

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Electrical properties of narrow gap low carrier concentration p-Hg1−xCdxTe

Cited by 24 publications

References 4 publications

Transport Anomalies in CdxHg1−xTe

Transport Anomalies in CdxHg1−xTe

Molecular Beam Epitaxy of HgCdTe Materials and Detectors

Galvanomagnetic Properties of p‐Hg_1−xCd_xTe

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Electrical properties of narrow gap low carrier concentration p-Hg1−xCdxTe

Cited by 24 publications

References 4 publications

Transport Anomalies in CdxHg1−xTe

Transport Anomalies in CdxHg1−xTe

Molecular Beam Epitaxy of HgCdTe Materials and Detectors

Galvanomagnetic Properties of p‐Hg1−xCdxTe

Contact Info

Product

Resources

About

Galvanomagnetic Properties of p‐Hg_1−xCd_xTe