Electrical Properties of n‐Type Polycrystalline Indium Phosphide Films

Saitoh, Tadashi; Matsubara, Sunao

doi:10.1149/1.2133483

Cited by 15 publications

(3 citation statements)

References 10 publications

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“…Comparing them with the experimental values shows reasonable agreement in some cases but also a considerable number of discrepancies. A striking feature of results from CdS (Wu and Bube 1974) and InP (Saitoh and Matsubara 1977) is the very large range of po values obtained for samples with nominally the same grain sizes. Wherever there is a large increase in $b this seems to be associated with a sympathetic increase in po.…”

Section: Other Materialsmentioning

confidence: 93%

“…There is very little clear evidence for variation of $b with doping level, for example. Saitoh and Matsubara (1977) report on a range of n-type InP films doped between and 1025 m-3 where $b shows a clear tendency to decrease as N increases, even though Nt must range between 4 x 1015 and 3 x 1016 m-2 in order to satisfy equation (3.16). There is a similar qualitative dependence of $b on AT for the n-type InSb samples measured by Ling et a1 (1972) but that appears to be about the extent of the evidence.…”

Section: Other Materialsmentioning

confidence: 99%

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The Hall effect in polycrystalline and powdered semiconductors

1980

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T h e characterisation of the transport properties of semiconducting material through a combination of Hall effect and resistivity measurements is as important in understanding the electrical transport properties of polycrystalline and powdered semiconductors as it is for single-crystal semiconductors. However, the interpretation of these measurements for polycrystalline and powdered semiconductors is more complicated due to the presence of grain boundaries and trapped interface charges which lead to inter-grain band bending and potential barriers. I n recent years a resurgence of interest in these materials, due to their potential for large-area device applications, has led to a much better understanding of the influence of grain boundaries on these properties.This review surveys the development of this subject from its origins in the early 1950s to the recent advances of the last few years, showing the extent to which a considerable body of experimental results can now be understood in terms of simple theoretical models.We give a critical review of idealised two-phase geometrical models which, though first considered nearly 30 years ago, still form the basis of the subject. These treatments derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents. We show that these models can be applied to the interpretation of transport measurements in polycrystalline films and powder layers.Important distinctions are made depending on whether the depletion layers extend completely or partially through the grains, whether the Debye length is greater or less than the grain size and whether the mean free path is greater or less than the grain size. When the depletion region extends only partially through the grain, the Hall effect measures the carrier concentration in the bulk of the grain while the Hall mobility should be given by p= po exp (-+b/kT) where +b is the bandbending and ,uo is related to the grain diameter 1. When the depletion region extends right through the grain, the carrier concentration measured may be very much lower than the bulk doping level but is still close to the carrier concentration in the centre of the grains. Band-bending is related to doping level N and interface trap density Nt. It reaches a maximum value when Nt=Nl, and ,u therefore shows a minimum.Consideration of the possibility of the mean free path being greater than the grain size 0034-4885/80/111263

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Section: Other Materialsmentioning

confidence: 93%

Section: Other Materialsmentioning

confidence: 99%

The Hall effect in polycrystalline and powdered semiconductors

1980

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“…Untreated InP has a drastically lower SRV ($10 3 cm s À1 ) 9-15 as compared to GaAs ($10 6 cm s À1 ), 15,16 making it an ideal candidate for efficient poly-crystalline cells. However, while poly-GaAs has been widely explored in the past, 17,18 there have been few reports of poly-InP in terms of growth techniques, [19][20][21] material quality, 9,22 or device performance. 23,24 Here, we report on high optical quality poly-InP thin films grown on molybdenum thin film and foil substrates, by metalorganic chemical vapor deposition (MOCVD).…”

Section: Introductionmentioning

confidence: 99%

High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

Zheng

Seok

et al. 2012

Journal of Applied Physics

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III-V semiconductor solar cells have demonstrated the highest power conversion efficiencies to date. However, the cost of III-V solar cells has historically been too high to be practical outside of specialty applications. This stems from the cost of raw materials, need for a lattice-matched substrate for single-crystal growth, and complex epitaxial growth processes. To address these challenges, here, we explore the direct non-epitaxial growth of thin poly-crystalline films of III-Vs on metal substrates by using metalorganic chemical vapor deposition. This method minimizes the amount of raw material used while utilizing a low cost substrate. Specifically, we focus on InP which is known to have a low surface recombination velocity of carriers, thereby, making it an ideal candidate for efficient poly-crystalline cells where surface/interface properties at the grain boundaries are critical. The grown InP films are 1-3 lm thick and are composed of micron-sized grains that generally extend from the surface to the Mo substrate. They exhibit similar photoluminescence peak widths and positions as single-crystalline InP, as well as excellent crystallinity as examined through TEM and XRD analyses. This work presents poly-InP as a promising absorber layer for future photovoltaics. V C 2012 American Institute of Physics. [http://dx.

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