Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Siegel, W.; Kühnel, G.; Koi, H.; Geelach, W.

doi:10.1002/pssa.2210950139

Cited by 9 publications

(11 citation statements)

References 27 publications

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“…(24) at an electric field of about 100 kV cm -1 . 76,77 This value is well out of the regimes encountered by our present simulations and is expected to be encountered experimentally only for biases greater than E ) 1.1 V vs the flat-band potential. E. Simulation Parameters.…”

Section: Physical Representation Of the Semiconductor/liquid Contact ...supporting

confidence: 62%

“…This value yielded a lowlevel minority carrier lifetime of 100 ns, in good agreement with experimental data on n-InP samples. 76,77 The concentrations of both the oxidized and reduced forms of the redox species, 1,1′-dimethylferrocene +/0 , were set to 0.10 M. The formal potential of the redox couple was 0.8 V from the conduction band, and the reorganization energy was held constant at λ ) 0.5 eV. 6,8,78 The simulated laser pulse had a maximum intensity at 200 ps and a full width at half-maximum (fwhm) value of 70 ps.…”

Section: Physical Representation Of the Semiconductor/liquid Contact ...mentioning

confidence: 99%

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Conditions Under Which Heterogeneous Charge-Transfer Rate Constants Can Be Extracted from Transient Photoluminescence Decay Data of Semiconductor/Liquid Contacts As Determined by Two-Dimensional Transport Modeling

et al. 1998

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An extensive series of digital simulations of the decay dynamics of photoexcited charge carriers at a semiconductor/liquid interface has been performed using the two-dimensional simulation code ToSCA. ToSCA treats majority and minority carrier capture processes separately and incorporates field-dependent carrier mobility terms. These features produce dramatic differences in the output parameters obtained when fitting experimental data with ToSCA relative to those obtained by fitting such data with prior, less complete, simulations. The simulations revealed that for a typical (n-type in our example) InP electrode in contact with outer-sphere redox reagents dissolved in the liquid phase the photoluminescence decays were generally insensitive to the value of the minority carrier charge-transfer rate constant, k ht . Instead, diffusion and driftinduced separation of photogenerated carriers in the space-charge layer of the semiconductor dominated the time decay of the observed luminescence signal under most experimentally accessible conditions. Values of k ht and of the minority carrier low-level surface recombination velocity, S p , could be obtained from an analysis of the photoluminescence decays only when the following restricted sets of conditions were satisfied simultaneously: 10 1 cm s -1 e S p e 10 5 cm s -1 , 10 -18 cm 4 s -1 e k ht e 10 -15 cm 4 s -1 , and the electrode potential, E, was in the region 0 < E < +0.15 V relative to the flat-band potential of the n-type semiconductor/ liquid interface. The simulations demonstrated that it was not possible to extract a "field dependence" of the charge-transfer rate constant when the semiconductor/liquid contact was maintained in reverse bias (E g +0.15 V vs the flat-band potential) and was subjected to light pulses that produced low or moderate carrier injection levels. Under such conditions, the photoluminescence decay dynamics were dominated by driftinduced charge separation in the space-charge layer of the semiconductor. Under high-level injection conditions, no "field dependence" could be observed because the majority of the photoluminescence decay dynamics occurred near the flat-band condition, so the value of the band bending in the semiconductor under dark, equilibrium conditions had negligible influence on the luminescence transients produced by a high-intensity laser pulse. Additionally, comparison between one-dimensional and two-dimensional simulations showed that use of one-dimensional simulation routines to extract S p and k ht values from experimental data obtained using focused laser beam excitation can lead to severe overestimates of interfacial charge-transfer rates.

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Section: Physical Representation Of the Semiconductor/liquid Contact ...supporting

confidence: 62%

Section: Physical Representation Of the Semiconductor/liquid Contact ...mentioning

confidence: 99%

Conditions Under Which Heterogeneous Charge-Transfer Rate Constants Can Be Extracted from Transient Photoluminescence Decay Data of Semiconductor/Liquid Contacts As Determined by Two-Dimensional Transport Modeling

et al. 1998

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“…7,18 For p-type semiconductors, the thermal activation energy E A is dependent on the hole concentration at high temperature and the optical ionization energy E A0 can be estimated. 19,20 From E A = 115± 5 meV at 300 K, we derive an optical ionization energy of E A0 = 158± 7 meV for our p-type SZO. This value is in good agreement with the theoretical ionization energy of the complex acceptors ͑Sb Zn -2V Zn ͒ predicted by first principles calculations ͑160 meV͒ ͑Ref.…”

mentioning

confidence: 99%

Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition

Guo

Allenic

Chen

et al. 2007

Applied Physics Letters

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Antimony-doped p-type ZnO films epitaxially grown on (0001) sapphire substrates were fabricated by pulsed laser deposition at 400–600°C in 5.0×10−2Torr oxygen without postdeposition annealing. The films grown at 600°C have among the highest reported hole concentration of 1.9×1017cm−3 for antimony doping, Hall mobility of 7.7cm2∕Vs, and resistivity of 4.2Ωcm. Transmission electron microscopy reveals that the p-type conductivity closely correlates to the high density of defects which facilitate the formation of acceptor complexes and the compensation of native shallow donors. The thermal activation energy of the acceptor was found to be 115±5meV and the corresponding optical ionization energy is ∼158±7meV.

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“…In the literature are used. Besides lattice scattering (with n i = -1.5 and μ L (300) = 900 cm 2 /Vs for GaSb [4,6,7], and n i = -2.2 and μ L (300) = 150 cm 2 /Vs for InP [6,8] deduced from empirical data from the literature) and ionized impurity scattering (n i =3/2), the inclusion of an additional scattering mechanism characterized with n i = -1/2 was found necessary for the fits. This latter scattering mechanism Is usually ascribed to carrier scattering on space charge regions [9,10], but other physical mechanism could also play a role.…”

Section: Mobility Analysis and Discussionmentioning

confidence: 99%

Hole mobility in InP and GaSb

Pődör¹

2008

2008 31st International Spring Seminar on Electronics Technology

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Results are reported on an experimental and theoretical study of the temperature dependence of hole mobility in nominally undoped p-type GaSb and in Zn-doped p-type InP bulk crystals in the temperature range from 77 to 300 K. In both materials space charge scattering and/or dipole scattering described with a mobility contribution with a ∼T -1/2 like temperature dependence dominated the hole mobility in the investigated temperature range.

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Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Cited by 9 publications

References 27 publications

Conditions Under Which Heterogeneous Charge-Transfer Rate Constants Can Be Extracted from Transient Photoluminescence Decay Data of Semiconductor/Liquid Contacts As Determined by Two-Dimensional Transport Modeling

Conditions Under Which Heterogeneous Charge-Transfer Rate Constants Can Be Extracted from Transient Photoluminescence Decay Data of Semiconductor/Liquid Contacts As Determined by Two-Dimensional Transport Modeling

Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition

Hole mobility in InP and GaSb

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