Electrical properties of MnIn2Se4

Niftiev, N. N.; Alidzhanov, M. A.; Тагиев, О. Б.; Mamedov, F. M.; Muradov, M. B.

doi:10.1134/1.1755885

Cited by 8 publications

(9 citation statements)

References 3 publications

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“…In the volt-ampere characteristic, two sections are seen: up to 3 and up to 3/2 for U = 0.7 V. This may testify to the fact that the space-charge limited currents (SCLC) play the main role in the passage of current [20,21]. Such behavior of the VAC suggests that the behavior of both ρ ⊥ (ω) and hodograph of impedance can change upon application of constant voltage.…”

Section: Resultsmentioning

confidence: 96%

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

Іващишин¹,

Grigorchak²,

Mikityuk³

et al. 2010

Russ Phys J

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The purpose of this work was to form a periodic multilayer structure with alternate heterophase and heteroaggregate nanolayers using intercalation techniques. The investigation was concerned with layered semiconductor gallium selenide. The stages of formation of a liquid GaSe crystal are described. The results of examination of the obtained samples by the methods of X-ray diffraction and impedance spectroscopy are discussed. The structures of impedance models are given.

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Section: Resultsmentioning

confidence: 96%

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

Іващишин¹,

Grigorchak²,

Mikityuk³

et al. 2010

Russ Phys J

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“…These OVC's exist in different crystal structures and display semiconducting properties, show a broad range of band gaps, form mutual solid solutions and manifest several interesting optical and structural properties associated with the crystallographic ordered array of vacancies [3][4][5]. Among these materials the semi-magnetic semiconductors Mn III 2 B VI 4 C have also received considerable attention [12][13][14][15][16][17][18][19][20][21][22][23]. This is mainly because of the presence of magnetic Mn +2 ions which make these compounds of considerable interest from the point of view of their magneto-optical properties.…”

Section: Introductionmentioning

confidence: 99%

The fundamental absorption edge in MnIn2Se4 layer semi-magnetic semiconductor

Rincón

Torrres

Sagredo

et al. 2015

Physica B: Condensed Matter

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“…Specifically, the structure and magnetic properties of FeIn 2 S 4 were investigated in [1,4]. It was found that this compound is antiferromagnetic at tem peratures below Néel temperature T N = 4.2 K. In [8], the electrical properties of FeIn 2 S 4 in a static field were explored and the switching effect was discovered. Works [9,10] were devoted to the electrochemical properties of FeIn 2 S 4 nanocrystals.…”

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confidence: 99%

“…These compounds are promis ing for lasers, light modulators, photodetectors, and other magnetically controlled functional devices.The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12]. Specifically, the structure and magnetic properties of FeIn 2 S 4 were investigated in [1,4].…”

mentioning

confidence: 99%

“…

The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12].

…”

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AC electrical properties of FeIn2S4

et al. 2012

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FeIn 2 S 4 belongs to the ternary compounds of class AB 2 X 4 (where A = Mn, Fe, Co, Ni; B = Ga, In; and X = S, Se, Te) some of which are being extensively studied today [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. These compounds are promis ing for lasers, light modulators, photodetectors, and other magnetically controlled functional devices.The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12]. Specifically, the structure and magnetic properties of FeIn 2 S 4 were investigated in [1,4]. It was found that this compound is antiferromagnetic at tem peratures below Néel temperature T N = 4.2 K. In [8], the electrical properties of FeIn 2 S 4 in a static field were explored and the switching effect was discovered. Works [9,10] were devoted to the electrochemical properties of FeIn 2 S 4 nanocrystals. In [11,12], FeIn 2 S 4 based photosensitive structures were fabri cated. However, the ac properties of this compound have not been touched upon. In this work, we report experimental data for the ac electrical performance of FeIn 2 S 4 .FeIn 2 S 4 polycrystals were obtained by direct alloy ing of high purity (99.99%) elements taken in stoichi ometric amounts. It was found by the X ray diffraction method that the polycrystals have a spinel structure with lattice parameter a = 10.62 Å [1, 3]. The electri cal properties were measured on ~0.5 mm thick wafers cut from a FeIn 2 S 4 ingot on which silver paste electrodes (plates) were applied. The capacitors thus obtained were placed in a thermostat, where the tem perature was controllably varied between 293 and 400 K. The temperature was measured accurate to ±0.5 K. The capacitance and resistivity were measured with E7 20 digital immitance meters (frequency range 25-10 6 Hz). The measuring voltage applied to the sample was 1 V. Figure 1 plots capacitance C of the capacitor with FeIn 2 S 4 semiconductor inside versus frequency f at different temperatures. Permittivity ε was calculated from the formula .It was found that ε varies within 300-2800 in the temperature interval 293-373 K and the frequency range 5 × 10 3 -10 6 Hz. It is seen in Fig. 1 that, at tem peratures between 293 and 323 K, the capacitance first slowly decreases in the frequency range 5 × 10 3 -2 × 10 5 Hz and then, in the frequency interval 2.5 × 10 5 -5.0 × 10 5 Hz, a resonance is observed. As the temper ature rises further, the resonance disappears. The res onance effect can be explained in terms of the barrier model [17], since imperfect crystals may contain, along with high resistivity layers with local barrier grains, extended low resistivity barrier layers localized on inhomogeneities, such as dislocations, electrical C εε 0 S/d = Abstract-The frequency and temperature dependences of the ac capacitance and resistivity of FeIn 2 S 4 semiconductors are studied. Resonances are observed at certain temperatures in the frequency range (2.5-5.0) × 10 5 Hz. The permittivity of the crystals and the activation energy of charge carriers are determined. It is found that elec...

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Electrical properties of MnIn2Se4

Cited by 8 publications

References 3 publications

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

The fundamental absorption edge in MnIn2Se4 layer semi-magnetic semiconductor

AC electrical properties of FeIn2S4

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