Electrical properties of Mn-doped GaSb

Mareš, Jiřı́ J.; Hubík, P.; Krištofik, J.; Štěpánek, B.; Šestáková, V.; Pekárek, L.

doi:10.1016/0921-5107(94)90032-9

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…The PL peaks could shift towards lower energy at a step proportional to the mean tail depth, and an overestimation of the ionization energy could result. The activation energy of the Mn acceptor in GaSb was estimated at 1672 meV from temperature-dependent Hall measurements [14,20]. The value corresponds very well with our estimation.…”

Section: Resultssupporting

confidence: 51%

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Optical characterization of gallium antimonide highly doped with manganese

Kučera

Novák

2006

Journal of Physics and Chemistry of Solids

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Section: Resultssupporting

confidence: 51%

“…Alternatively, one can use a simple physical concept presented in Ref. [20] to calculate a H and N I . For an acceptor ionization energy of 15.6 meV, one obtains a H around 24 Å , and consequently N I could be as high as 1.26 Â 10 18 cm À3 .…”

Section: Resultsmentioning

confidence: 99%

Optical characterization of gallium antimonide highly doped with manganese

Kučera

Novák

2006

Journal of Physics and Chemistry of Solids

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“…These new states correspond to acceptors, as discussed above. They are derived from the valence band by the [11,14,15,16,17,18,19,20]) in respect to valence-band edges, whose relative positions are taken from Ref. [21].…”

mentioning

confidence: 99%

“…2: Experimental energies of Mn levels in the gap of III-V compounds according to Refs. [11,14,15,16,17,18,19,20]) in respect to valence-band edges, whose relative positions are taken from Ref. [21].…”

mentioning

confidence: 99%

Ferromagnetism of magnetic semiconductors: Zhang-Rice limit

2002

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It is suggested that p-d hybridization contributes significantly to the hole binding energy E b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both strong increase of E b and evolution of Mn spinresonance spectrum with the magnitude of valence-band offsets. For such a structure of Mn impurity in III-V materials, possible models accounting for the recently determined Curie temperature of about 940 K in a compensated Ga0.91Mn0.09N are discussed.

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Grain boundary effects in nanocrystalline diamond

Mareš

Hubík

Krištofik

et al. 2008

Physica Status Solidi (a)

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Thin films of heavily boron doped plasma‐enhanced chemical vapour deposition grown nanocrystalline diamond were experimentally investigated by means of low temperature transport methods and noise analysis as well. The influence of grain boundaries on superconductivity and other related quantum phenomena observed in this system was treated using phenomenological model according to which the superconducting diamond grains in the film are interconnected by a single or a few weak links having a characteristic dimension in the nanometre range. Comparing then the experimental values of critical current and current‐induced Josephson's noise in the superconductivity transition region with the figures predicted by our model, its relevance for the description of boron‐doped nanocrystalline diamond has been proved. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electrical properties of Mn-doped GaSb

Cited by 7 publications

References 8 publications

Optical characterization of gallium antimonide highly doped with manganese

Optical characterization of gallium antimonide highly doped with manganese

Ferromagnetism of magnetic semiconductors: Zhang-Rice limit

Grain boundary effects in nanocrystalline diamond

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