1996
DOI: 10.1103/physrevb.54.17469
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Electrical properties ofNiS2xSexsingle crystals: From Mott insulator to par

Abstract: Electrical resistivity () and Seebeck-coefficient measurements (␣) are reported for NiS 2Ϫx Se x single crystals in the range 0рxр0.71. There is a general trend toward increasing metallicity with increasing x. In the range 0.38рxр0.51 a pronounced rise of with temperature (T) is observed where the antiferromagnetic insulating ͑or antiferromagnetic metallic͒ phase changes over to the paramagnetic insulating phase. The analysis of ␣ vs T curves suggests that in the low-temperature insulating state both holes and… Show more

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Cited by 62 publications
(73 citation statements)
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“…(27) and Eq. (28). The values of S * at open and closed circles are very close, indicating the consistency between the real and Matsubara frequency approach to calculate S * .…”
Section: A Square Latticementioning
confidence: 65%
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“…(27) and Eq. (28). The values of S * at open and closed circles are very close, indicating the consistency between the real and Matsubara frequency approach to calculate S * .…”
Section: A Square Latticementioning
confidence: 65%
“…(27) and Eq. (28). The second method starts from computing ReL 11 (ω) and ReL 12 (ω) from spectral functions A k (ω) using Eq.…”
Section: Numerical Resultsmentioning
confidence: 99%
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“…It is also found that for a narrow range of composition near x c , the system undergoes a transition from antiferromagnetic insulator to antiferromagnetic metal with decreasing temperature [7]. The low temperature antiferromagnetic metallic state vanishes around x = 1.0, leading to a paramagnetic metallic ground state of the system [7].…”
Section: Introductionmentioning
confidence: 88%
“…A prominent example of this is the correlated insulator NiS 2 . 18 Figure 3 (a) shows R s (T) data measured for the crystal etched for 20 minutes, while cooling and warming in various applied magnetic fields H. The sheet resistance increases on cooling below T = 305 K and reaches a maximum around 250 K. A step-like increase is observed in R s (T) at T 0 = 220 K after which there is a rapid decrease in sheet resistance suggesting metallic behaviour down to 20 K, below which a slight increase in sheet resistance is observed again. This upturn is stronger than observed for the 10 min sample and will be consistent with a stronger localization due to the increased disorder introduced due to etching for longer times.…”
Section: B Electrical Transportmentioning
confidence: 99%