Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Heterostructure from heteromixture: unusual OER activity of FeP and CoP nanostructures on physical mixing

“…S24†) matches well with the behaviour shown by common MOS capacitors with high leakage current with active change in the phase angle towards zero degrees. 56 This analysis proves that metal phosphides behave as a pre-catalyst under alkaline conditions, actively converting to oxyhydroxides which may show this sort of observed behaviour. 57,58…”

“…S24 †) matches well with the behaviour shown by common MOS capacitors with high leakage current with active change in the phase angle towards zero degrees. 56 This analysis proves that metal phosphides behave as a pre-catalyst under alkaline conditions, actively converting to oxyhydroxides which may show this sort of observed behaviour. 57,58 FeP-CoP (80 : 20 wt ratio) prepared by the in situ method (see Experimental details, ESI †) shows 234 mV overpotential to achieve a current density of 10 mA cm −2 , a slightly higher value than that of the physically mixed metal phosphides.…”

Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface

“…Moreover, MgO has a little mismatch with the SiC, which is about 3% for the MgO(111) and SiC(0001) surfaces, allowing the preparation of a high-quality MgO-gate [4]. There are several ways to grow MgO layers, including molecular beam epitaxy, atomic layer deposition, or magnetron sputtering [4][5][6][7]. Many factors can affect the insulator/semiconductor interface properties, including substrate surface cleanliness, surface stoichiometry, number of defects in a substrate, quality of adlayers, and thin film deposition method.…”