Electrical properties of In/Yb/n-Hg1 ? x Cd x Te contacts

Abstract

The specific contact resistance, p~, and the modified sheet R,k, of In/Hg I _,Cd,Te contacts incorporating a Yb diffusion barrier were measured as a function of the layer thickness and composition (x= 0.32-0.65). Significant increases in p~, were evident only for x >_ 0.56 and at Yb thicknesses between 2.5 and 6.0 nm, depending on the x-value. Analytical examination of the interfaces by Rutherford backscattering spectrometry (RBS) also showed a progressive reduction in the extent of inward diffusion of In with increasing.thickness of the Yb interlayer.