Electrical properties of in-plane-implanted graphite nanoribbons

Camargo, Bruno Cury; Jesus, Ramon Ferreira de; Semenenko, Bogdan; Precker, Christian E.

doi:10.1063/1.4995223

Cited by 3 publications

(4 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our results follow a similar increase as a function of ion dose and the trend towards saturation at high ion doses. Therefore, we can conclude that this ion dose range makes graphite highly defective …”

Section: Resultsmentioning

confidence: 80%

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Rodriguez

Khan

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

Carbon nanomaterials are important for future sensors and electronics. Defects determine the material properties, therefore, it is critical to find new ways to investigate defects at the nanoscale. In this context, Raman spectroscopy (RS) is the tool of choice to study defects in carbon nanomaterials. On the other hand, Kelvin probe force microscopy (KPFM) provides structural and surface potential information at the nanoscale. Here, the authors demonstrate the synergistic application of these methods in the investigation of ion-beaminduced defects in graphite. KPFM and RS imaging are used for visualizing ioninduced defects in a wide range of ion doses from 10 10 to 10 16 ions cm À2 . For the lower range of ion dose, the authors find that RS provides image contrast for the different defect regions in graphite up to a dose of 5 Â 10 13 ions cm À2 . For higher doses, the sp 2 carbon concentration becomes so small that the Raman spectra get dominated by broad amorphous carbon bands. For this dose range, the KPFM contrast allows the defective regions to be differentiated. This contrast in KPFM originates from sp 3 carbons that act as charge traps. The results show that KPFM and Raman microscopy make a powerful and necessary combination for studying the spatial distribution of defects in carbon.

show abstract

Section: Resultsmentioning

confidence: 80%

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Rodriguez

Khan

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The technique of tilt-angle ion implantation is usually used to avoid the dopant channeling effect. The effect leads to an unpredictable doping profile and junction position because the dopant ions travel long distances in the crystal lattice without colliding with the lattice atoms [9,10]. However, implanting dopants at a tilt angle will induce the shadowing effect [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

Hsu¹,

Chen²

2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, electrical characteristics of dual-gate polycrystalline silicon (poly-Si) thin film transistors (TFTs) with different undoped region (UR) offsets are investigated. Performance degradation of the poly-Si TFT is dependent on the offset value, offset direction, and offset location. In addition, the degradation is also dependent on the applied drain bias. Significant performance deterioration is observed when the offset is larger than ±0.4 μm. Even an offset in an individual UR can cause the degradation. At a low drain bias of −0.1 V, the degradation is independent on the direction and the location of the offset. When the drain bias increases to −10 V, the performance degradation of the TFT with the positive UR offset significantly reduces. The physical mechanisms underlying the performance variation are studied by analyzing the energy band diagrams, carrier concentration distributions, and electric field distributions.

show abstract

“…However, such devices could also be used to probe other off-plane phenomena in HOPG, e.g. ionic channeling 12 and optical properties. This occurs because graphite samples fabricated this way are ribbons whose sides are covered by a thin (approx.…”

mentioning

confidence: 99%

“…They were prepared with ion-milling etching using a FEI dual beam microscope, following the procedure previously outlined in refs. 12,19 . Two devices were fabricated with different milling currents.…”

mentioning

confidence: 99%

Ion-beam-milled graphite nanoribbons as mesoscopic carbon-based polarizers

Muszyński

Antoniazzi

Camargo

2023

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We demonstrate optical reflectivity and Raman responses of graphite microstructures as a function of light polarization when the incident light is applied perpendicular to the material's stacking direction (c-axis). For this, we employed novel graphite nanoribbons with edges polished through ion-beam etching. In this unique configuration, a strong polarization dependence of the D, G, and 2D Raman modes is observed. At the same time, polarized reflectivity measurements demonstrate the potential of such a device as a carbon-based, on-chip polarizer. We discuss the advantages of the proposed fabrication method as opposed to the mechanical polishing of bulk crystals.

show abstract

Electrical properties of in-plane-implanted graphite nanoribbons

Cited by 3 publications

References 27 publications

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

Ion-beam-milled graphite nanoribbons as mesoscopic carbon-based polarizers

Contact Info

Product

Resources

About