Electrical Properties of Heavily Doped Silicon

Chapman, P. W.; Tufte, O. N.; Zook, J. D.; Long, Donald

doi:10.1063/1.1729180

Cited by 139 publications

(65 citation statements)

References 17 publications

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“…Specifically, Fig. 2(a) shows the conductivity of Si:P measured by Chapman et al [11] up to 400 K for samples with n͞n c in the same range as in our measurements for FeSi 12x Al x . It is striking that for both Si:P and FeSi 12x Al x , the conductivity rises linearly with decreasing T over a large range of T , as of course it does for many high-T c superconductors and certain rare earth intermetallics [12].…”

mentioning

confidence: 93%

Metal-Insulator Transitions in the Kondo Insulator FeSi and Classic Semiconductors Are Similar

et al. 1997

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We have observed the metal-insulator transition in the strongly correlated insulator FeSi with the chemical substitution of Al at the Si site. The magnetic susceptibility, heat capacity, and field-dependent conductivity are measured for Al concentrations ranging from 0 to 0.08. For concentrations $0.01 we find metallic properties quantitatively similar to those measured in Si:P with the exception of a greatly enhanced quasiparticle mass. Below 2 K the temperature and field-dependent conductivity can be completely described by the theory of disordered Fermi liquids. [S0031-9007(97)02878-0] PACS numbers: 75.30.Mb, 71.30. + h, Lightly doped semiconductors and insulators lie at the heart of both microelectronic technologies and modern condensed matter physics. The most prevalent and best characterized of these systems continues to be carrier doped Si, a simple band insulator. The electronic and magnetic properties of carrier doped Si near the metal-insulator (MI) transition have been the subject of a large and growing literature where it is well established that these properties are determined by the disorder and electron-electron (e-e) interactions [1]. Investigations of the MI transition where the Coulomb interaction is more significant, such as the Mott-Hubbard systems V 22x O 3 , La 22x Sr x CuO 4 , and Ni͑S, Se͒ 2 [2] have revealed interesting magnetic and superconducting ground states. A key feature separating Si from the Mott-Hubbard insulators is that whereas Si is an insulator by virtue of its band structure, the latter are band metals which are insulating because of Coulomb interactions. Recently, another class of insulators has emerged, namely, insulators correctly predicted by band theory to be insulating [3] yet which also display optical and magnetic properties not understandable using band theory [4]. The extent to which such insulators, frequently labeled as "strongly correlated" or "Kondo" insulators, are fundamentally different from conventional insulators and semiconductors is unclear [5]. In the present Letter, we present strong evidence that one popular strongly correlated insulator, FeSi, is actually a renormalized version of Si in the same sense that the heavy fermion metals are Fermi liquids with vastly renormalized band masses. More specifically, we show that chemical doping by Al substitution onto the Si sites yields a metal which is very similar to Si doped just beyond its metal-insulator transition. The only obvious distinction is that in the metal derived from FeSi, the quasiparticle mass is greatly enhanced relative to that in doped Si. Thus we have carrier doped a strongly correlated insulator through the MI transition to obtain a disordered Fermi liquid ground state with a large carrier mass-a heavy fermion metal. Our data represent convincing support for the proposition that while heavy fermion metals and strongly correlated insulators have peculiar temperaturedependent properties, their ground states remain the well understood Fermi liquids and band insulators.The samples were either...

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confidence: 93%

Metal-Insulator Transitions in the Kondo Insulator FeSi and Classic Semiconductors Are Similar

et al. 1997

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“…This finding not only fills the gap of understanding how the EPI affects the lattice thermal conductivity in semiconductors when the carrier concentration is in the range of 10 19 to 10 21 cm −3 , but also has a profound technological impact on the field of thermoelectrics. Although a higher carrier concentration also means a higher electronic thermal conductivity, it is in general much smaller than the reduction of the lattice thermal conductivity in the considered range of carrier concentrations (a simple estimation using the Wiedemann-Franz law and experimental data of the electrical conductivity of heavily doped silicon [66] yields values below 1 W=mK for carrier concentrations above 10 20 cm −3 at room temperature).…”

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confidence: 99%

Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

et al. 2015

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The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 10 19 cm −3 (the reduction reaches up to 45% in p-type silicon at around 10 21 cm −3 ), a range of great technological relevance to thermoelectric materials. The coordinates of electrons and atomic nuclei represent the most common degrees of freedom in a solid. The full quantum mechanical treatment of the excitations in a solid thus requires the solution of the Schrödinger equation involving the coordinates of all electrons and atomic nuclei, which appears intractable in most cases. A widely applied simplification, the Born-Oppenheimer approximation (BOA) [1], makes use of the fact that the electrons' mass is much smaller than that of the nuclei, and the electrons respond to the motions of the nuclei so quickly that the nuclei can be treated as static at each instant. Under the BOA, the coordinates of the nuclei enter the electronic Schrödinger equation as external parameters, and in turn the electronic ground-state energy acts as part of the interaction energy between the nuclei given a specific configuration, with which the quantized excitations of the atomic nuclei, namely phonons, can be investigated separately from the electrons [2]. It is important to note, however, that the BOA does not separate the electronic and atomic degrees of freedom completely, and a remaining coupling term can cause transitions between the eigenstates of the electron and phonon systems [3]. This electronphonon interaction (EPI) problem was first studied by Bloch [4], and later understood as the main source of resistance to electrical conduction in metals and semiconductors at higher temperatures [3,5,6], and played the key role in the microscopic theory of superconductivity [7].While the effect of the EPI on electron transport has been widely studied in great detail and has become standard content in textbooks [3,5,6], its effect on phonon transport has received much less attention. In our opinion the reason is twofold. First of all, the carrier concentration in semiconductors for conventional microelectronic and optoelectronic applications is typically below 10 19 cm −3 [8], and as we shall show later, the impact of the EPI on phonon transport in this concentration range turns out to be too small to invoke any practical interest. On the other hand, in metals with typical carrier concentrations greater than 10 22 cm −3 , the thermal conduction is dominated by electrons, an...

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“…model proposed by Arora et al (1982), based on the experimental resistivity data of Chapman et al (1963) fot temperatures above room temperatures, and Moutsy et al (1974) for room temperature and below, for heavily doped silicon was substituted. These experimental resistivity (mobility) data were fitted into an empirical relation similar to the original formulation of Caughey and Thomas (1967) ( T) -…”

Section: Carrier Mobility In Heavily Doped Layersmentioning

confidence: 99%

“…However, for practical purposes accurate results may still be obtained with Boltzmann's statistics if experimentally measured data are used to derive electrical parameters. In this work, the electrical parameters are derived using the experimental resistivity data of Chapman et al (1963) and Moutsy et al (1974), on heavily doped silicon. The resistivity data are converted into mobility using…”

Section: Carrier Mobility In Heavily Doped Layersmentioning

confidence: 99%

“…Therefore, in order to accurately assess the effects and magnitude of source/ drain resistance, the mobility model of MINIMOS (version I) is reconstructed using the experimental data of Chapman et al (1963) and Moutsy et al (1974) on heavily doped silicon layers. The reconstructed MINIMOS is then used to simulate appropriate current-voltage data from which source/drain resistance is evaluated.…”

Section: Ds =Vbs-ids(r S + R D )mentioning

confidence: 99%

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Magnitude and effects of source/drain series resistance in sub-micron MOSFETs

Dike

1991

International Journal of Electronics

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A detailed analysis of the effects and magnitudes of source and drain resistances in VLSI MOSFETs is presented as a function of both temperature and source/ drain doping levels, using two-dimensional numerical simulation results as well as experimental data. Series resistance versus source/drain doping is shown to follow a simple hyperbolic relation. A simple but accurate technique is demonstrated for the determination of source/drain series resistance as well as its dependence on gate voltage. The analysis performed shows that series resistance is invariant with temperature and an explanation is suggested.

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Electrical Properties of Heavily Doped Silicon

Cited by 139 publications

References 17 publications

Metal-Insulator Transitions in the Kondo Insulator FeSi and Classic Semiconductors Are Similar

Metal-Insulator Transitions in the Kondo Insulator FeSi and Classic Semiconductors Are Similar

Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

Magnitude and effects of source/drain series resistance in sub-micron MOSFETs

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