Electrical properties of grain size tuned CdSe nanocrystal films for practical applications

Charge transport in grain size tuned CuO nanocrystal films

“…They found that at temperatures below 120 K, the conductance followed the Efros-Shklovskii variable range hopping law [62] while above 120 K the temperature dependence of conductance showed Arrhenius behaviour. The temperature dependent d c conductivity of the present samples approximately showed Arrhenius behaviour as reported for NC films of CdSe films by Kang et al [61], Yu et el [59] and Sajid and Khadar [13]. The mechanism charge transport in the present samples of CuO NCs can also be considered to be similar to that reported for QD films.…”

“…Murray et al have reviewed the reported research work in the area of charge transport in strongly coupled quantum dot solids and have highlighted the future prospects of these solids [7]. Recently, synthesis of CdSe nanocrystal (CdSe NC) thin films from nanoparticle building blocks generated through the condensation of CdSe vapors in an inert gas at pressures comparatively larger than the vacuum required for thin film deposition was reported by Sajid and Khadar [13]. In that report, electrical conductivity was explained on the basis of a model in which charge transport in the CdSe NC films was akin to that of solid films of CdSe quantum dots, of sizes given by Brus equation [14], connected together by an outer shell of CdSe material where charge carriers had free movement.…”

Composite formation in CdSe:Cu2Se nanocrystal films, charge transport characteristics and heterojunction performance

“…2(b) of ref. 28. The band gap energies of the lm samples were determined from a 2 versus hn plots (Tauc plot) shown in Fig.…”

“…[23][24][25] CdSe is an important II-VI semiconductor and has been extensively investigated for studying quantum size effects in semiconductor quantum structures. [26][27][28] Zhang et al 29 through theoretical studies predicted that CdSe can easily be n-doped and lightly p-doped. Cu 2 Se is a p-type semiconductor due to copper vacancies and has an indirect band gap of 1.1-1.27 eV 30 which makes it an absorber material and a direct bandgap between 2.0 and 2.3 eV which makes it a window material in solar cells.…”

Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

“…CdSe, on the other hand, has a comparatively higher band gap ranging between visible and near-IR region. CdSe with large Bohr radius (6 nm) and PbSe with extraordinarily large Bohr radius (46 nm) could benefit with the quantum confinement effect which translates to controlled particle size, desired dielectric properties, and fine-tuned band energies. , Individually these two, CdSe (Groups II–VI) and PbSe (Groups IV–VI) chalcogenides, have shown demanding application in infrared detectors/emitters, − optoelectric devices, , solar control coatings, , and photo-electrochemical (PEC) solar cells. , In recent times the Pb-chalcogenide materials are subjected to different synthetic procedures, such as chemical, electrochemical, photochemical, thermal evaporation, and radio frequency magnetron sputtering, etc., to obtain desired optical and electrical properties by controlling particle size growth and tailoring the band positions accordingly. Size and shape controlled chemical synthesis of PbSe and PbS was demonstrated by Li et al Goodwin et al reported how inorganic surface treatments on PbSe quantum dot thin films affects the photogenerated charge carrier mobility, lifetime, and valence band shifting toward generating p- and n-type SCs .…”