Electrical properties of glasses in the GeBiSbSe and GeBiS systems

Nagels, P.; Tichý, L.; Tříska, A.; Tichá, H.

doi:10.1016/0022-3093(83)90339-3

Cited by 139 publications

(35 citation statements)

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“…32 It is also reported that Bi changes the coordination from threefold and fourfold showing a positive charge to twofold and sixfold showing a negative charge. [33][34][35][36][37] These effects may generate changes in electronic distribution locally in the films, which function as nucleation centers during the crystallization of NGeTe. In addition, it is known that NaCl structure enables fast crystal growth during the phase transition because of simple structure.…”

Section: Resultsmentioning

confidence: 99%

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Park

Kim

et al. 2015

AIP Advances

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In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

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Section: Resultsmentioning

confidence: 99%

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Park

Kim

et al. 2015

AIP Advances

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“…A decrease in the optical band gap of the amorphous film can be caused by the increased tailing of the conduction band edge into the gap due to environmental contaminations during heat treatments [14]. On the other hand, the growth of the crystallization phases with increasing annealing temperature can lead to an increase in the film optical band gap.…”

Section: Resultsmentioning

confidence: 99%

Electrical and optical properties of evaporated Ag10As30Te60 thin films

et al. 1992

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“…The addition of Ge may also create localized states in the band gap [19]. This will lead to a shift in the absorption edge towards lower photon energy, and, consequently, the decrease in the optical energy gap can be explained by the increased tailing [20] of the conduction band edge into the gap due to the addition of germanium impurities.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated Thin Films

Sharma

Katyal

2008

Research Letters in Materials Science

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The present paper reports the effect of Ge addition on the optical band gap and refractive index of As 2 Se 3 thin films. Thin films of As 2 Se 3 and (As 2 Se 3 ) 90 Ge 10 were prepared by thermal evaporation technique at base pressure 10 −4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400-1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As 2 Se 3 . The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

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Electrical properties of glasses in the GeBiSbSe and GeBiS systems

Cited by 139 publications

References 1 publication

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Electrical and optical properties of evaporated Ag10As30Te60 thin films

Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated Thin Films

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