Electrical Properties of Gallium Fluoride(GaF₃)/GaAs Interface with and without Sulfur Treatment

Abstract

The electrical properties of gallium fluoride (GaF3) films deposited on GaAs are investigated. It has been found that deposited GaF3 films are good insulators with a dielectric constant of 6.6 and a resistivity of 2×1013 Ω·cm. It has also been found that the interface properties are good enough to generate inversion carriers either when a GaF3 film is deposited onto a homoepitaxial GaAs layer without breaking the vacuum or when the film is deposited on a sulfur-treated surface.

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

“…Recently, it was shown that a 10 eV band gap insulator, GaF 3 , can be grown on GaAs via exposure to various fluorine-based compounds (30,34,35,38,107,108,120,(123)(124)(125)(126). Operational devices have been constructed from GaF 3 -GaAs structures (124,125,(127)(128)(129), which demonstrates that the interface state density can be reduced to a sufficiently low level that GaF 3 may be a suitable insulator for GaAs-based devices. Hence, because of its potential technological importance, the reaction of atomic F with GaAs has been studied recently.…”