Electrical properties of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures

Abstract

We report on the current-voltage (IV) characteristics of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures as a function of temperature. IV measurements show a strong temperature dependence indicating a thermal distribution of carriers flowing over a barrier. From these data we deduce an effective conduction band barrier of 0.9 eV between GaAs and GaN.

AlN, GaN and InN (001) surface electronic band structure

“…Bulk zinc-blende GaN grown on (0 0 1) GaAs was first reported in [2]. There are also other studies on AlN and GaN zincblende [3][4][5][6][7][8].…”

Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors

“…However, due to the large lattice mismatch, the growth of GaN/GaAs heterostructures requires great skills 34 and experimental data are rare. 35,36 Moreover, again due to the lattice mismatch it has to be expected that the value of the true GaN substitution layer relaxation deviates from the value predicted for example by continuum elasticity theory. As a first step towards a study of the structural effects induced by the GaN substitution layer, for our calculations we have chosen a moderate, 10% relaxation of the GaN substitution layer.…”

Crystalline Growth of Wurtzite GaN on (111) GaAs

“…Few researchers have used GaAs as a substrate for GaN growth possibly because early comparisons showed sapphire to produce smoother and more oriented GaN films [5). Recently, the electrical properties of cubic GaN in a S-I-S structure on (100) GaAs grown by modified molecular beam epitaxy has been reported [10). Concurrent work in Japan, involving the growth of GaN on (111) GaAs by MBE has also shown wurtzite GaN on (111)…”